Invited Paper EM2-ThM1
Challenges and Materials Solutions for Memristive Devices (ReRAM)

Thursday, November 13, 2014, 8:00 am, Room 314

Memristive devices (also known as RRAM when used for memory) are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage or current, which can be used to store and process information for computing systems beyond CMOS technologies. These devices have shown great scalability, switching speed, non-volatility, analogue resistance change, non-destructive reading, 3D stack-ability, CMOS compatibility and manufacturability. However, there are still a number of challenges facing memristive devices for real applications, including device variability and isolation in a crossbar array. This talk will discuss and address these challenges from the materials perspective.