DRAM, NAND and ReRAM utilize high-K oxides to enable high performance devices . High-K oxides are deployed as capacitor dielectrics in DRAM, blocking dielectrics in NAND and solid state electrolytes to enable ion motion in ReRAM. The material and electrical properties required to enable these different technologies are widely different. Several critical parameters such as dielectric constant, band offset, trap density, modulus, crystallinity and texture have to be simultaneously optimized for each technology. This talk highlights the performance requirements of advanced memory devices and the high-K materials engineering required to enable these devices.