| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM1-WeM2 Invited Paper Formation and Properties of High-k/InGaAs Interfaces on Well-Controlled Surfaces P.C. McIntyre, Stanford University |
| 9:00am | EM1-WeM4 Chemical Passivation of GaAs using Alkanethiols P. Mancheno-Posso, A.J. Muscat, University of Arizona |
| 9:20am | EM1-WeM5 Invited Paper Disorder Induced Gap States in III-V MOS Devices E.M. Vogel, Georgia Institute of Technology |
| 10:40am | EM1-WeM9 Invited Paper III-V Frequency Dispersion in CV and Small Signal AC Transconductance Measurements H.C. Lin, IMEC, Belgium |
| 11:20am | EM1-WeM11 High-k Dielectric/InGaAs MOSCAPs with EOTs 0.7 nm and Low Interface Trap Densities V. Chobpattana, S. Stemmer, University of California, Santa Barbara |
| 11:40am | EM1-WeM12 Effect of Deposition Temperature on the Electrical Properties of ALD-HfO2 Film on GaAs S. Choi, Y.-C. Byun, Y. An, H. Kim, Sungkyunkwan University, Republic of Korea |