AVS 59th Annual International Symposium and Exhibition | |
Graphene and Related Materials Focus Topic | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | GR+AS+NS+SP+SS-TuA1 High Resolution Real and Reciprocal Space Photoelectron Emission Microscocopy on Heterogeneous Graphene/SiC(000-1) K. Winkler, B. Kroemker, 1Omicron NanoTechnology, Germany, N. Barrett, IRAMIS, Saclay, France, E. Conrad, GeorgiaTech |
2:20pm | GR+AS+NS+SP+SS-TuA2 Evidence of Nanocrystalline Semiconducting Graphene Monoxide during Thermal Reduction of Graphene Oxide in Vacuum C. Hirschmugl, E. Mattson, H. Pu, S. Cui, M. Schofield, S. Rhim, G. Lu, M. Nasse, University of Wisconsin Milwaukee, R.S. Ruoff, University of Texas at Austin, M. Weinert, M. Gajdardziska-Josifovska, J. Chen, University of Wisconsin Milwaukee |
2:40pm | GR+AS+NS+SP+SS-TuA3 Invited Paper Scanning Tunneling Spectroscopy of Epitaxial Graphene: Local Band Mapping and Wavefunction Engineering P.N. First, Georgia Tech |
4:00pm | GR+AS+NS+SP+SS-TuA7 Intercalation of O2 an CO Controlled by the Mesoscopic Structure of Graphene E. Grånäs, J. Knudsen, Lund University, Sweden, U. Schröder, T. Gerber, C. Busse, Universität zu Köln, Germany, M.A. Arman, K. Schulte, J.N. Andersen, Lund University, Sweden, T.W. Michely, Universität zu Köln, Germany |
4:20pm | GR+AS+NS+SP+SS-TuA8 Long-range Atomic Ordering and Variable Interlayer Interactions in Two Overlapping Graphene Lattices with Stacking Misorientations T. Ohta, T.E. Beechem, Sandia National Laboratories, J.T. Robinson, Naval Research Laboratory, G.L. Kellogg, Sandia National Laboratories |
4:40pm | GR+AS+NS+SP+SS-TuA9 Chemically-resolved Interface Structure of Epitaxial Graphene on SiC(0001) J.D. Emery, Northwestern Univ., B. Detslefs, European Synchrotron Radiation Fac., France, H.J. Karmel, Northwestern Univ., V.D. Wheeler, U.S. Naval Research Lab, J.M.P. Alaboson, Northwestern Univ., L.O. Nyakiti, R.L. Myers-Ward, C.R. Eddy, Jr., D.K. Gaskill, U.S. Naval Research Lab, M.C. Hersam, Northwestern Univ., J. Zegenhagen, European Synchrotron Radiation Fac., France, M.J. Bedzyk, Northwestern Univ. |
5:00pm | GR+AS+NS+SP+SS-TuA10 Formation of Graphene on SiC( 000-1 ) in Disilane and Neon Environments G. He, N. Srivastava, R. Feenstra, Carnegie Mellon University |
5:20pm | GR+AS+NS+SP+SS-TuA11 Characterization of Few Layer Graphene Films Grown on Cu-N i and SiC Substrates P. Tyagi, J.D. McNeilan, J. Abel, F.J. Nelson, Z.R. Robinson, R. Moore, A.C. Diebold, V.P. LaBella, C.A. Ventrice, Jr., University at Albany - SUNY, A.A. Sandin, D.B. Dougherty, J.E. Rowe, North Carolina State Univ., C. Dimitrakopoulos, A. Grill, C.Y. Sung, IBM T.J. Watson Res. Center, S. Chen, A. Munson, Y. Hao, C.W. Magnuson, R.S. Ruoff, Univ. of Texas at Austin |
5:40pm | GR+AS+NS+SP+SS-TuA12 Thickness-related Electronic Properties of Single-layer and Few-layer Graphene Revealed by Single-pass Kelvin Force Microscopy and dC/dZ Measurements J. Yu, S. Wu, Agilent Technologies, Inc. |