AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Tuesday Sessions
       Session GR+AS+NS+SP+SS-TuA

Invited Paper GR+AS+NS+SP+SS-TuA3
Scanning Tunneling Spectroscopy of Epitaxial Graphene: Local Band Mapping and Wavefunction Engineering

Tuesday, October 30, 2012, 2:40 pm, Room 13

Session: Graphene Characterization Including Microscopy and Spectroscopy
Presenter: P.N. First, Georgia Tech
Correspondent: Click to Email
Because the crystalline orientation is determined prior to growth, epitaxial graphene (EG) on silicon carbide is an excellent material to consider for 2D wavefunction engineering, where device properties are designed through wavefunction confinement and material strain. In pursuit of this goal, we use scanning tunneling microscopy (STM) and spectroscopy (STS) to characterize the local structural and electronic properties of EG and a simple EG nanostructure. With some care, STS can be used to measure the full energy-momentum dispersion of both filled and empty states, on length scales determined by the coherence of the graphene wavefunctions. Applying a magnetic field introduces a field-tunable comb of discrete Landau level energies that we use to obtain high momentum resolution, to characterize the tip-induced surface potential, and to detect subtle interlayer interactions in a multilayer graphene stack. * Work performed in collaboration with NIST Center for Nanoscale Science and Technology ** Funded in part by NSF and by NRI-INDEX.