AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Tuesday Sessions
       Session GR+AS+NS+SP+SS-TuA

Paper GR+AS+NS+SP+SS-TuA8
Long-range Atomic Ordering and Variable Interlayer Interactions in Two Overlapping Graphene Lattices with Stacking Misorientations

Tuesday, October 30, 2012, 4:20 pm, Room 13

Session: Graphene Characterization Including Microscopy and Spectroscopy
Presenter: T. Ohta, Sandia National Laboratories
Authors: T. Ohta, Sandia National Laboratories
T.E. Beechem, Sandia National Laboratories
J.T. Robinson, Naval Research Laboratory
G.L. Kellogg, Sandia National Laboratories
Correspondent: Click to Email
We report a method to examine the effect of stacking misorientation in bilayer graphene by transferring chemical vapor deposited (CVD) graphene onto monolithic graphene epitaxially grown on silicon carbide (SiC) (0001). The resulting hybrid bilayer graphene displays long-range Moiré diffraction patterns having various misorientations even as it exhibits electron reflectivity spectra nearly identical to epitaxial bilayer graphene grown directly on SiC. These varying twist angles affect the 2D (G’)-band shape of the Raman spectrum indicating regions of both a monolayer-like single π state and Bernal-like split π states brought about by the differing interlayer interactions. This hybrid bilayer graphene fabricated via a transfer process therefore offers a means to systematically study the electronic properties of bilayer graphene films as a function of stacking misorientation angle.

The work at Sandia National Laboratories was supported by LDRD and by the US DOE Office of Basic Energy Sciences, Division of Materials Science and Engineering. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. The work at NRL was funded by the Office of Naval Research.