AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Tuesday Sessions
       Session GR+AS+NS+SP+SS-TuA

Paper GR+AS+NS+SP+SS-TuA12
Thickness-related Electronic Properties of Single-layer and Few-layer Graphene Revealed by Single-pass Kelvin Force Microscopy and dC/dZ Measurements

Tuesday, October 30, 2012, 5:40 pm, Room 13

Session: Graphene Characterization Including Microscopy and Spectroscopy
Presenter: J. Yu, Agilent Technologies, Inc.
Authors: J. Yu, Agilent Technologies, Inc.
S. Wu, Agilent Technologies, Inc.
Correspondent: Click to Email
Graphene has attracted much attention recently due to their exotic electronic properties. Potential applications of graphene sheets as ultrathin transistors, sensors and other nanoelectronic devices require them supported on an insulating substrate. Therefore, a quantitative understanding of charge exchange at the interface and spatial distribution of the charge carriers is critical for the device design. Here, we demonstrate that atomic force microscopy (AFM)-based technique Kelvin force microscopy (KFM) can be applied as an experimental means to quantitatively investigate the local electrical properties of both single-layer and few-layer graphene films on silicon dioxide. Our measurements indicate that the surface potential of single-layer grapheme is 60 mV higher than that of the silica interfacial layer. The effect of film thickness on the surface potential of few-layer grapheme is observed. For example, a 66 mV increase in the surface potential is detected for an eleven-layered film with respect to a nine-layer film. Furthermore, with the introduction of multiple lock-in amplifiers (LIAs) in the electronics for scanning probe microscopes, single-pass kelvin force microcopy and probing of the other electric property such as local dielectric permittivity via the capacitance gradient dC/dZ measurements are allowed by the simultaneous use of the probe flexural resonance frequency ωmech in the first LIA targeting the mechanical tip-sample interactions for surface profiling, and a much lower frequency ωelec (both in the second LIA and its second harmonic in the third LIA) for sample surface potential and dC/dZ measurements, respectively. In contrast to surface potentials, the dC/dZ measurements show that local dielectric permittivity of few-layer grapheme films maintain at the same level regardless of the film thickness. Such simultaneous monitoring of multiple electronic properties that exhibit different behaviors in response to the grapheme layers provides us a way to achieve both a comprehensive characterization and a better understanding of grapheme materials.