| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-TuA1 Interface Engineering of Porous and Non-Porous ILD Layers Using Molecular Layer Deposition for Interconnect Applications J. Bielefeld, Intel Corporation, H. Zhou, P. Loscutoff, Stanford University, S. Clendenning, Intel Corporation, S.F. Bent, Stanford University |
| 2:20pm | EM-TuA2 Synchrotron X-ray Scattering Investigation of Morphological Stability of Cu Thin Film Interfaces A.P. Warren, University of Central Florida, M.F. Toney, Stanford Synchrotron Radiation Lightsource, K. Barmak, Carnegie Mellon University, I.I. Kravchenko, Oak Ridge National Laboratory, K.R. Coffey, University of Central Florida |
| 2:40pm | EM-TuA3 Invited Paper Interconnect Scaling for 10nm and Beyond Z. Tokei, IMEC, Belgium |
| 4:00pm | EM-TuA7 High Throughput Crystal Orientation Mapping of Nanometric Cu: Impact of Surface and Grain Boundary Scattering on Electrical Resistivity X. Liu, Carnegie Mellon Univ., A. Darbal, Nanomegas, K. Ganesh, Univ. of Texas at Austin, G. Rohrer, D. Choi, Carnegie Mellon Univ., P. Ferreira, Univ. of Texas at Austin, B. Yao, T. Sun, A.P. Warren, Univ. of Central Florida, M.F. Toney, Stanford Synchrotron Radiation Lab, K.R. Coffey, Univ. of Central Florida, K. Barmak, Carnegie Mellon Univ. |
| 4:20pm | EM-TuA8 Developing Robust Ultra-Low-k Dielectric (κ≤2.55) Materials using Novel Characterization Techniques for the 20nm Node and Beyond D.R. Kioussis, Z. Sun, Y. Lin, GLOBALFOUNDRIES, A. Madan, N. Klymko, C. Parks, S. Molis, IBM Semiconductor R&D Ctr, E.T. Ryan, GLOBALFOUNDRIES, E. Huang, S.M. Gates, A. Grill, IBM T.J. Watson Res. Center, B. Kim, J.K. Kim, Samsung Electronics Co. Ltd., Korea, D. Restaino, T.H. Lee, IBM Semiconductor R&D Ctr, S. Hosadurga, IBM Research Group, S.A. Cohen, IBM T.J. Watson Res. Center, K. Virwani, IBM Research - Almaden |
| 4:40pm | EM-TuA9 Reflection Electron Energy Loss Spectroscopy Investigation of Band Gap and Defect States in Low-k and High-k Dielectrics B. French, S. King, Intel Corporation |
| 5:00pm | EM-TuA10 The Effects of Plasma Exposure and Vacuum-Ultraviolet Radiation on Photopatternable Low-k Dielectric Materials M.T. Nichols, K. Mavrakakis, University of Wisconsin-Madison, Q. Lin, IBM T.J. Watson Research Center, J.L. Shohet, University of Wisconsin-Madison |
| 5:20pm | EM-TuA11 A Survey of Alternative Methods for Curing Porous SiCOH Films N. LiCausi, V. Kamineni, GLOBALFOUNDRIES, S. Ohsiek, H. Geisler, M. Weisheit, M. Majer, GLOBALFOUNDRIES, Germany, E.T. Ryan, GLOBALFOUNDRIES |
| 5:40pm | EM-TuA12 Metallization Challenges in Integration of Soft Dielectric Materials R. Chebiam, C. Jezewski, B. Krist, H. Yoo, J. Clarke, Intel Corporation |