| AVS 59th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM+OX-WeA1 Invited Paper Dielectric Requirements for a Novel Tunnel-FET Based on Room-Temperature Superfluidity in Graphene Double Layers L.F. Register, X. Mau, D. Reddy, D. Basu, W. Jung, I. Sodeman, D. Pesin, A. Hassibi, A.H. MacDonald, S.K. Banerjee, University of Texas at Austin |
| 2:40pm | EM+OX-WeA3 Invited Paper Interfaces and Surfaces in Tunnel Field-effect Transistors G. Xing, University of Notre Dame |
| 4:00pm | EM+OX-WeA7 Resistive Switching Characteristics of Al2O3/TiO2 Bilayer ReRAM dependent on Al2O3 Thickness H.Y. Jeon, J.S. Lee, J.G. Park, W.C. Jang, H.T. Jeon, Hanyang University, Korea |
| 4:20pm | EM+OX-WeA8 High- k SrTiO3 Dielectric by Plasma-Assisted Atomic Layer Deposition N.Y. Garces, D.J. Meyer, B.P. Downey, V.D. Wheeler, D.W. Zapotok, C.R. Eddy, Jr., U.S. Naval Research Laboratory |
| 4:40pm | EM+OX-WeA9 Invited Paper Micro-Antenna Coupled Nano-MIM Diodes: Modeling, Design, Processing and Application N. Goldsman, Univ. of Maryland, CoolCAD Electronics LLC, F. Yesilkoya, Univ. of Maryland, S. Potbhare, CoolCAD Electronics, LLC, M. Peckerar, Univ. of Maryland, A. Akturk, CoolCAD Electronics, LLC, K. Choi, Univ. of Maryland, W. Churaman, U.S. Army Research Lab, N.K. Dhar, DARPA/MTO |
| 5:20pm | EM+OX-WeA11 High-Electron-Mobility SiGe on Sapphire Substrate for Next Generation Ultrafast Chipsets H.J. Kim, Y. Park, National Institute of Aerospace (NIA), H.-B. Bae, Korea Advanced Institute of Science and Technology, S.H. Choi, NASA Langley Research Center (NASA LaRC) |
| 5:40pm | EM+OX-WeA12 Fabrication and Characterization of Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes A.N. Nasir, J.F. Conley, Oregon State University |