AVS 59th Annual International Symposium and Exhibition
    Electronic Materials and Processing Wednesday Sessions
       Session EM+OX-WeA

Invited Paper EM+OX-WeA3
Interfaces and Surfaces in Tunnel Field-effect Transistors

Wednesday, October 31, 2012, 2:40 pm, Room 009

Session: Oxides and Dielectrics for Novel Devices and Ultra-dense Memory
Presenter: G. Xing, University of Notre Dame
Correspondent: Click to Email
Abstract: It is now recognized that compound semiconductor tunnel field-effect transistors (TFETs) can retain MOSFET-like speed at low supply voltages given that on-current and voltage can be lowered in proportion. To achieve high on-current at low Vdd, the staggered-gap and broken-gap AlGaSb/InAs heterojunctions and graphene are being developed. In this talk I will first outline the recent experimental progress in the development of interband tunnel transistors with sub-60 mV/decade subthrehold swing at Notre Dame. Subsequent discussions will be then focused on the impact of interfaces and surfaces of the transistor on the TFET performance, in particular, the interface between the gate dielectric and semiconductor as well as the semiconductor surface after transistor isolation etch.