AVS 58th Annual International Symposium and Exhibition | |
Plasma Science and Technology Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | PS+SS-WeM1 Investigation of Sidewall Passivation Mechanism in a 'CMOS-compatible' Plasma Etching Process for InP-based Photonic Devices Sophie Bouchoule, CNRS-LPN, France, L. Vallier, CNRS-LTM, France, L. Gatilova, G. Patriarche, S. Guilet, L. Le Gratiet, CNRS-LPN, France |
8:20am | PS+SS-WeM2 Coupling of Surface Mixed-Layer Kinetics and Monte Carlo Modeling for Profile Evolution in Patterning Complex Oxides Nathan Marchack, C.D. Pham, J.P. Chang, University of California Los Angeles |
8:40am | PS+SS-WeM3 Invited Paper Plasma Diagnostics and Nanoscale Surface Processing - Application to SiO2, High-k PVD and ALD Takeshi Kitajima, National Defense Academy, Japan |
9:20am | PS+SS-WeM5 Nitric Oxide Reactivity Investigation via Plasma Processing Joshua Blechle, E.R. Fisher, Colorado State University |
9:40am | PS+SS-WeM6 Near-Threshold Ion-Enhanced Silicon Etching Hyungjoo Shin, W. Zhu, V.M. Donnelly, D.J. Economou, University of Houston |
10:40am | PS+SS-WeM9 Atomic Chlorine Absolute Densities and Surface Recombination Coefficients in Inductively-Coupled Plasmas in Pure Cl2 Jean-Paul Booth, LPP-CNRS, France, N. Sirse, NCPST Dublin City University, Ireland, Y. Azamoum, P. Chabert, LPP-CNRS, France |
11:00am | PS+SS-WeM10 Silicon Etching Characteristics by Hydrogen Halide Ions (HCl+ and HBr+) and Ions of Desorbed Species (SiClx+) Tomoko Ito, K. Karahashi, Osaka University, Japan, S.-Y. Kang, Tokyo Electron Ltd., Japan, S. Hamaguchi, Osaka University, Japan |
11:20am | PS+SS-WeM11 Interaction of Chlorine Plasma with SixCly Coated Plasma Reactor Chamber Walls Rohit Khare, A. Srivastava, V.M. Donnelly, University of Houston |
11:40am | PS+SS-WeM12 Numerical Simulation of Enhanced Oxygen Diffusion in Silicon as a Cause of Si Recess Kohei Mizotani, M. Isobe, Osaka University, Japan, M. Fukasawa, T. Tatsumi, Sony Corporation, Japan, S. Hamaguchi, Osaka University, Japan |