AVS 58th Annual International Symposium and Exhibition
    Plasma Science and Technology Division Wednesday Sessions

Session PS+SS-WeM
Plasma Surface Interactions (Fundamentals & Applications) I

Wednesday, November 2, 2011, 8:00 am, Room 202
Moderator: Catherine Labelle, GLOBALFOUNDRIES


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am PS+SS-WeM1
Investigation of Sidewall Passivation Mechanism in a 'CMOS-compatible' Plasma Etching Process for InP-based Photonic Devices
Sophie Bouchoule, CNRS-LPN, France, L. Vallier, CNRS-LTM, France, L. Gatilova, G. Patriarche, S. Guilet, L. Le Gratiet, CNRS-LPN, France
8:20am PS+SS-WeM2
Coupling of Surface Mixed-Layer Kinetics and Monte Carlo Modeling for Profile Evolution in Patterning Complex Oxides
Nathan Marchack, C.D. Pham, J.P. Chang, University of California Los Angeles
8:40am PS+SS-WeM3 Invited Paper
Plasma Diagnostics and Nanoscale Surface Processing - Application to SiO2, High-k PVD and ALD
Takeshi Kitajima, National Defense Academy, Japan
9:20am PS+SS-WeM5
Nitric Oxide Reactivity Investigation via Plasma Processing
Joshua Blechle, E.R. Fisher, Colorado State University
9:40am PS+SS-WeM6
Near-Threshold Ion-Enhanced Silicon Etching
Hyungjoo Shin, W. Zhu, V.M. Donnelly, D.J. Economou, University of Houston
10:40am PS+SS-WeM9
Atomic Chlorine Absolute Densities and Surface Recombination Coefficients in Inductively-Coupled Plasmas in Pure Cl2
Jean-Paul Booth, LPP-CNRS, France, N. Sirse, NCPST Dublin City University, Ireland, Y. Azamoum, P. Chabert, LPP-CNRS, France
11:00am PS+SS-WeM10
Silicon Etching Characteristics by Hydrogen Halide Ions (HCl+ and HBr+) and Ions of Desorbed Species (SiClx+)
Tomoko Ito, K. Karahashi, Osaka University, Japan, S.-Y. Kang, Tokyo Electron Ltd., Japan, S. Hamaguchi, Osaka University, Japan
11:20am PS+SS-WeM11
Interaction of Chlorine Plasma with SixCly Coated Plasma Reactor Chamber Walls
Rohit Khare, A. Srivastava, V.M. Donnelly, University of Houston
11:40am PS+SS-WeM12
Numerical Simulation of Enhanced Oxygen Diffusion in Silicon as a Cause of Si Recess
Kohei Mizotani, M. Isobe, Osaka University, Japan, M. Fukasawa, T. Tatsumi, Sony Corporation, Japan, S. Hamaguchi, Osaka University, Japan