AVS 58th Annual International Symposium and Exhibition | |
Plasma Science and Technology Division | Wednesday Sessions |
Session PS+SS-WeM |
Session: | Plasma Surface Interactions (Fundamentals & Applications) I |
Presenter: | Jean-Paul Booth, LPP-CNRS, France |
Authors: | J.-P. Booth, LPP-CNRS, France N. Sirse, NCPST Dublin City University, Ireland Y. Azamoum, LPP-CNRS, France P. Chabert, LPP-CNRS, France |
Correspondent: | Click to Email |
Two-photon laser-induced fluorescence (TALIF) at 233.2nm was used to measure the density of Cl atoms in a 13.56MHz Inductively-coupled plasma in pure chlorine. Initial attempts to use the technique proposed by Ono et al [1], to calibrate the signal using photolysis of CCl4 gave unphysically high values, probably due to poor knowledge of the laser spatial profile at the focal point. Therefore we developed a new technique, based on 355nm (tripled YAG) photolysis of Cl2 to generate a known density of Cl atoms. The variation of the absolute Cl density at the reactor centre was measured as a function of pressure and RF power in the range 3-90 mTorr and 20-500W. We also used the TALIF technique to determine the recombination coefficient, γCl, of atomic chlorine at the reactor walls from the rate of decay of the Cl density in the afterglow of a pulsed discharge. The signal to noise ratio is good enough to make measurements far into the afterglow (50 ms), when the gas has cooled to the wall temperature, making a precise measurements possible. We found that γCl varies in the range 0.05-0.15, decreasing with increased pressure and RF power, and increasing with gas residence time. We show that the latter effect is due to the increased proportion of O2 due to inevitable small air leaks: the presence of 0.5% O2 was shown to double the value of γCl. The origin of the pressure and power dependencies will be discussed.
Work partly supported by Agence Nationale de la Recherche project INCLINE (ANR-09 BLAN 0019)
[1] K. Ono, T. Oomori, M. Tuda, and K. Namba, Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 10, 1071, (1992).