AVS 58th Annual International Symposium and Exhibition
    Plasma Science and Technology Division Monday Sessions

Session PS+SE-MoA
Advanced FEOL / Gate Etching II

Monday, October 31, 2011, 2:00 pm, Room 201
Moderator: Andreas Kadavanich, Mattson Technology


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm PS+SE-MoA1
Mechanical Analysis of the Line Edge Roughness in the sub-20nm Line Patterns
SangWuk Park, K.H. Baek, Samsung Electronics Co., Ltd, Republic of Korea, S.H. Choi, J.S. Hong, Lam Research Corporation, K.S. Shin, Y.G. Shin, H.G. Kang, Samsung Electronics Co., Ltd, Republic of Korea
2:20pm PS+SE-MoA2
Dependence of ArF Photoresist Polymer Structure on Line-Edge-Roughness Formation during Plasma Etching Processes
Takuji Uesugi, A. Wada, Tohoku University, Japan, S. Maeda, K. Kato, A. Yasuda, S. Sakuma, Mitsubishi Rayon, Japan, S. Samukawa, Tohoku University, Japan
2:40pm PS+SE-MoA3
193nm Photoresist Pre-Treatments Before Plasma Transfer to Improve LWR Transfer and CD Control
Erwine Pargon, CNRS-LTM, France, L. Azarnouche, ST Microelectronics, France, M. Fouchier, K. Menguelti, O. Joubert, CNRS-LTM, France
3:00pm PS+SE-MoA4
Plasma Smoothing of Extreme Ultraviolet Photoresist: LWR Reduction at 30nm Half Pitch
Efrain Altamirano-Sanchez, A. Pret Vaglio, R. Gronheid, D. Marc, W. Boullart, IMEC, Belgium
3:40pm PS+SE-MoA6
Controlling Line Edge Roughness for Aggressively Scaled CMOS Devices by Reducing Organic Underlayer Deformation
Hiroyuki Miyazoe, S.U. Engelman, M. Glodde, M.A. Guillorn, M. Brink, A. Banik, W.S. Graham, E.M. Sikorski, N.C.M. Fuller, IBM T.J. Watson Research Center
4:00pm PS+SE-MoA7 Invited Paper
Single Digit Nano Plasma Etching
Deirdre Olynick, Lawrence Berkeley National Laboratory
4:40pm PS+SE-MoA9
Ar and He Plasma Pretreatments of Organic Masking Materials for Performance Improvements during Plasma Pattern Transfer
Dominik Metzler, F. Weilnboeck, N. Kumar, G.S. Oehrlein, University of Maryland, S. Engelmann, R.L. Bruce, N.C.M. Fuller, IBM T.J. Watson Research Center
5:00pm PS+SE-MoA10
Sub-32nm Node Mask Patterning for Deep Silicon Trench Etch
Justin Yarmush, H. Haga, Y. Chiba, K. Kumar, P. Biolsi, TEL Technology Center, America, LLC, J. An, H. Hichri, B. Dirahoui, X. Li, IBM Microelectronics, R. Wise, IBM Research
5:20pm PS+SE-MoA11
Quantitative Determination of the Mechanism of Anisotropic Silicon Etching
Melissa Hines, M.F. Faggin, K. Bao, A. Gupta, B. Aldinger, Cornell University