| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Monday Sessions |
| Session PS+SE-MoA |
| Session: | Advanced FEOL / Gate Etching II |
| Presenter: | Deirdre Olynick, Lawrence Berkeley National Laboratory |
| Correspondent: | Click to Email |
One of our themes at the Molecular Foundry at LBNL is “Single-Digit Nanofabrication” (SDN) which describes our efforts to pattern materials with resolution, precision, and control at the sub-10 nm scale. At this scale, we enable research and applications in areas such as nanoelectronics, nanomagnetics, nanofluidics and plasmonics. For instance, the Molecular Foundry’s work on graphene nanomeshes using SDN show a band gap opening with sub-bands.1 However, the patterning and plasma pattern transfer for SDN present significant challenges and the question arises, “What are the limits?”
In this talk, I will survey nanoscale etching work from 30-3 nm to demonstrate the challenges and opportunities for plasma nanopatterning. High resolution patterns are made using a variety of materials and techniques including atomic layer deposition, directed self-assembly and electron beam and nanoimprint lithographies. Recent work with cryogenic etching and simulation in the SDN regime will be highlighted.
1.Liang, X.; Jung, Y.-S.; Wu, S.; Ismach, A.; Olynick, D. L.; Cabrini, S.; Bokor, J., Nano Lett 2010 10, pp 2454-2460.
This work was performed at the Molecular Foundry, Lawrence Berkeley National Laboratory, and was supported in part by the U.S. Department of Energy under Contract No. DE-AC02—05CH11231