| AVS 53rd International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-TuA1 Invited Paper Highly-Selective and Low-Damage, Damascene Processes in Robust Porous Low-k/ Cu Interconnects H. Ohtake, Tohoku University, Japan |
| 2:40pm | PS2-TuA3 Plasma Confinement in Multi-frequency Plasma Process Chamber K. Bera, D.J. Hoffman, M. Kutney, Applied Materials, Inc. |
| 3:00pm | PS2-TuA4 Scaling of Dual Frequency Capacitively Coupled Plasma Etching Tools Above 100 MHz* Y. Yang, M.J. Kushner, Iowa State University |
| 3:20pm | PS2-TuA5 Patterning of Narrow SiOCH Trenches using the Late Porogen Removal Process T. Chevolleau, LTM-CNRS-France, D. Eon, M. Darnon, CNRS-LTM-France, T. David, CEA-LETI-France, L. Vallier, O. Joubert, CNRS-LTM-France |
| 3:40pm | PS2-TuA6 Profile Control and Sidewall Modifications of Narrow Porous ULK Trenches after Plasma Etching and Pore Sealing Treatments M. Darnon, T. Chevolleau, D. Eon, CNRS-LTM-France, F. Bailly, CNRS-IMN-France, L. Vallier, CNRS-LTM-France, J. Torres, STM-France, O. Joubert, CNRS-LTM-France |
| 4:00pm | PS2-TuA7 Three-Dimensional Control of Interconnect Features: Sidewall Roughness Transfer During Patterning Processes T. David, J. Foucher, N. Posseme, A. Jacquier, A.-L. Fabre, CEA-LETI-France |
| 4:20pm | PS2-TuA8 Dry Etch Process of Contact holes using Multi-Functional Hard Mask W.K. Kim, S.K. Lee, J.H. Cho, J.H. Sun, K.L. Lee, G.S. Lee, S.C. Moon, J.W. Kim, Hynix, Korea |