| AVS 53rd International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS1+MS+NM-TuM1 Resolving Gate Patterning Issues at sub 65 nm Technology Nodes T.J. Kropewnicki, C.-C. Fu, Freescale Semiconductor, Inc. |
| 8:20am | PS1+MS+NM-TuM2 Plasma Impact on ArF Resist Line Edge Roughness J. Thiault, E. Pargon, LTM / CNRS France, J. Foucher, CEA LETI France, O. Joubert, G. Cunge, LTM / CNRS France |
| 8:40am | PS1+MS+NM-TuM3 Invited Paper ArF Resist Friendly Etching Technology T. Hayashi, Y. Morikawa, K. Suu, ULVAC Inc., Japan |
| 9:20am | PS1+MS+NM-TuM5 Plasma Etching of Nano-Scale, Sub-10nm, Features Y. Zhang, C.T. Black, H.-C. Kim, E.M. Sikorski, T. Dalton, IBM Research |
| 9:40am | PS1+MS+NM-TuM6 Nickel Atom and Ion Density in an Inductively Coupled Plasma with an Internal Coil L. Xu, University of Houston, N. Sadeghi, University Joseph Fourier-Grenoble & CNRS, France, M.K. Jain, S.C. Vemula, V.M. Donnelly, D.J. Economou, P. Ruchhoeft, University of Houston |
| 10:40am | PS1+MS+NM-TuM9 Bias Frequency Effect on SOC Film Degradation in sub-45 nm Line and Space Pattern SiO@sub 2@ RIE using S-MAP H. Hayashi, K. Kikutani, J. Abe, A. Kojima, T. Oohashi, I. Sakai, T. Ohiwa, Toshiba Corporation, Japan |
| 11:00am | PS1+MS+NM-TuM10 High Aspect Ratio (>10:1) Amorphous Carbon Layer Etching Using Soft Etch Capability in a High Frequency Capacitive Coupled Plasma Source Dielectric Etch Chamber S. Sung, J. Wang, S. Ma, Applied Materials |
| 11:20am | PS1+MS+NM-TuM11 Chamber and Process Development of High Aspect Ratio Deep Trench Si Etch for DRAM Application below 60 nm S. Barth, A. Henke, Qimonda, Dresden, Germany, A. Kersch, Qimonda, Munich, Germany, M. Reinicke, University of Technology, Germany, W. Sabisch, Qimonda, Munich, Germany, J. Sobe, A. Steinbach, S. Wege, Qimonda, Dresden, Germany |