| AVS 51st International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS2-TuM1 Study of Refractory Metal Nitrides/HfO@sub 2@ Gate Stack Etching Using Inductively Coupled Plasma J.H. Chen, W.S. Hwang, W.J. Yoo, S.H.D. Chan, National University of Singapore, Singapore, D.-L. Kwong, University of Texas, Austin |
| 8:40am | PS2-TuM2 Line Width Roughness Reduction for Advanced Metal Gate Etch and STI Etch with 193nm Lithography in a Silicon Decoupled Plasma Source Etcher (DPSII) T. Chowdhury, H. Lee, A. Renaldo, K. Ikeuchi, A. Habbermas, B. Bruggermann, Cypress Semiconductor, Y. Du, M. Shen, S. Deshmukh, J. Choi, Applied Materials, Inc. |
| 9:00am | PS2-TuM3 Plasma Etching of Metal/High-K Gate Stack A. Le Gouil, STMicroelectronics, France, T. Chevolleau, G. Cunge, L. Vallier, O. Joubert, LTM-CNRS, France, P. Mangiagalli, T. Lill, Applied Materials |
| 9:20am | PS2-TuM4 Etching Ruthenium with O2- and Cl2-Containing Inductively Coupled Plasma C.-C. Hsu, D.B. Graves, J.W. Coburn, University of California, Berkeley |
| 9:40am | PS2-TuM5 Ru Etching Characteristics in Capacitively Coupled Ar/Cl@sub 2@/O@sub 2@ Plasma S. Rauf, P.L.G. Ventzek, V. Vartanian, B. Goolsby, Freescale Semiconductor, S. Burnett, International Sematech, L. Chen, Tokyo Electron America Inc. |
| 10:00am | PS2-TuM6 An Isotropic SiGe Etch Process for Fabrication of Silicon-on-Nothing Transistors T. Sparks, S. Rauf, Freescale Semiconductor, France, G. Cunge, L. Vallier, LTM-CNRS, France |
| 10:20am | PS2-TuM7 X-ray Photoelectron Spectroscopy Study on Walls Coatings and Passivation Layers Generated on Sidewalls Trenches during Shallow Trench Isolation Processes. C. Maurice, B. Pelissier, G. Cunge, O. Joubert, LTM-CNRS, France |
| 10:40am | PS2-TuM8 The Control of Electrode Impedance, Gas-Injection and Wafer-Temperature Radial Profile and their Effects on Poly-Gate Etching Performance M.H. Hagihara, L.C. Chen, F.H. Higuchi, Y.T. Tsukamoto, K.I. Inazawa, TEL, T.T. Tatsumi, A.K. Kawashima, Sony |
| 11:00am | PS2-TuM9 Process Diagnostics and Optimization in Plasma Etch Chambers Using In-Situ Temperature Metrology P. MacDonald, OnWafer Technologies, Inc., B. Hatcher, J.P. Holland, Applied Materials, Inc., M. Welch, M. Kruger, OnWafer Technologies, Inc. |
| 11:20am | PS2-TuM10 New Mthod to Analyse Chamber Walls Coating during Plasma Etch Processes O. Joubert, G. Cunge, B. Pelissier, C. Maurice, L. Vallier, LTM-CNRS, France |