| AVS 50th International Symposium | |
| Semiconductors | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| SC+EM-WeP1 STM Observation of Dopant Atoms and Point Defects in the p-type GaAs (110) Surface at 5K B. Grandidier, G. Mahieu, D. Deresmes, J.P. Nys, D. Stievenard, IEMN-CNRS, France, P. Ebert, IFF-Julich, Germany |
| SC+EM-WeP3 Metal-Oxide-Semiconductor Field Effect Transistors Investigated by Scanning Capacitance Force Microscopy K. Kimura, K. Kobayashi, H. Yamada, Kyoto University, Japan, K. Usuda, Toshiba Corporation, Japan, K. Matsushige, Kyoto University, Japan |
| SC+EM-WeP4 Effect of Mn Composition on Characterization of Zn@sub 1-x@Mn@sub x@Se Epilayers Y.-D. Choi, Y.-M. Yu, D.-J. Kim, K.-J. Lee, Mokwon University, South Korea, Byungsung O, K.-S. Lee, Chungnam National University, South Korea, I.-H. Choi, Chung-Ang University, South Korea, M.-Y. Yoon, Joongbu University, South Korea |
| SC+EM-WeP5 Linear Magnetoresistance in LaSb@sub 2@: The Role of Charge-Density Waves@footnote *@ A. Acatrinei, Louisiana State University, J.W. Richardson, Argonne National Laboratory, D. Young, D. Browne, Y. Losovyj, P.T. Sprunger, R.L. Kurtz, Louisiana State University |
| SC+EM-WeP6 Ferromagnetic Co-Implanted Rutile TiO@sub 2@(110) for Spintronics Applications V. Shutthanandan, S. Thevuthasan, T. Droubay, S.M. Heald, M.H. Englehard, L.V. Saraf, S.A. Chambers, Pacific Northwest National Laboratory, B.S. Mun, Lawrence Berkeley National Laboratory, R.P. Sears, B. Taylor, B.S. Sinkovic, University of Connecticut |
| SC+EM-WeP7 The Crystallization Behavior and Interfacial Reaction between GeTe and Sb@sub 2@Te@sub 3@ Film for the Application to the Phase Change Memory E.J. Jung, S.K. Kang, B.G. Min, Yonsei University, South Korea, H. Horii, Y.H. Ha, J.H. Park, Samsung, South Korea, D.H. Ko, Yonsei University, South Korea |
| SC+EM-WeP8 The Dependence of Charge Collection Efficiency on Metal Electrode in Polycrystalline CdZnTe(x=0.04) Material S.Y. Ahn, K.H. Kim, Korea University, S.Y. An, Korea Institute of Science and Technology, J.K. Hong, K.N. Oh, S.U. Kim, Korea University |
| SC+EM-WeP9 Surface Passivation of HgCdTe by RF Sputtered Silicon Nitride S.Y An, Korea University, Y.C. Joung, Hanyang University, Korea, S.H Lee, Korea University, S.H. Suh, J.S Kim, Korea Institute of Science and Technology |
| SC+EM-WeP10 Growth and Characterization of Thin Films of a New Semiconductor produced by Co-Sputtering of CdTe and Al@footnote 1@ M. Melendez-Lira, Cinvestav-IPN, Mexico, M. Zapata-Torres, CICATA-IPN, Mexico, S. Jimenez-Sandoval, Cinvestav-IPN, Mexico, M.A. Fuentes-Cabrera, Carnegie Mellon University |
| SC+EM-WeP11 Current Mapping of GaN Films A.A. Pomarico, University of Lecce, Italy, J.C. Dickinson, Virginia Commonwealth University, R. Cingolani, University of Lecce, Italy, H. Morkoc, A.A. Baski, Virginia Commonwealth University |