AVS 50th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EM-WeP

Paper SC+EM-WeP9
Surface Passivation of HgCdTe by RF Sputtered Silicon Nitride

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: S.Y An, Korea University
Authors: S.Y An, Korea University
Y.C. Joung, Hanyang University, Korea
S.H Lee, Korea University
S.H. Suh, Korea Institute of Science and Technology
J.S Kim, Korea Institute of Science and Technology
Correspondent: Click to Email
There have been considerable advances in HgCdTe device technology. However, surface passivation and insulator/HgCdTe interface are still a subject of great interests.@footnote 1@ Up to now, there has been a lot of results reported on passivants for HgCdTe devices. Recently, silicon nitride (SiN@sub x@) deposited by ECR-PCVD has been reported as a passivant for HgCdTe.@footnote 1,2@ But, there was no research report on RF magnetron sputtered SiN@sub x@ for HgCdTe passivation. In this paper we briefly report some experimental results concerning about interface state and fixed charge density in metal-insulator-semiconductor (MIS) structures realized by RF magnetron sputtered SiN@sub x@ on HgCdTe surface. The electrical properties of MIS structure were studied as a function of sputtering power and working pressure of sputtering chamber. Capacitance-voltage (C-V) characteristics were measured at 1MHz and interface state densities were obtained by Terman's method. It was observed that conductivity type of HgCdTe is closely related with deposition rate of SiNx. The p-type conductivity of HgCdTe was converted to n-type conductivity at deposition rate of less than 25Å/min. To prevent p-type HgCdTe from type conversion, it is necessary to maintain high sputtering rate of SiNx at initial stage. The interface state density and fixed charge density of SiN@sub x@ film on HgCdTe were 1.9x10@super 10@cm@super -2@, and 1.5x10@super 11@cm@super -2@, respectively, at sputtering power of 175W. @FootnoteText@@footnote 1@O. P. Agnihotri, C. A. Musca and L. Faraone, Semicond. Sci. Technol. Vol. 13. 839 (1998). @footnote 2@Y. Nemirovsky and G. Bahir, J. Vac. Sci. Technol. A, Vol.7, No. 2, 450 (1989).@Footnote 3@G. Sudo, N. Kajihara, Y. Miyamoto and K. Tanikawa, Appl. Phys. Lett. Vol.51, No.19, 1521 (1987).