AVS 50th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EM-WeP

Paper SC+EM-WeP7
The Crystallization Behavior and Interfacial Reaction between GeTe and Sb@sub 2@Te@sub 3@ Film for the Application to the Phase Change Memory

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: E.J. Jung, Yonsei University, South Korea
Authors: E.J. Jung, Yonsei University, South Korea
S.K. Kang, Yonsei University, South Korea
B.G. Min, Yonsei University, South Korea
H. Horii, Samsung, South Korea
Y.H. Ha, Samsung, South Korea
J.H. Park, Samsung, South Korea
D.H. Ko, Yonsei University, South Korea
Correspondent: Click to Email
Flash memory has been widely used as a non-volatile memory, however, it has limitations, such as low speed and low write endurance. To supplement the limitation of flash memory, recently phase change memory(PCM) has been investigated using the class of elements known as chalcogenide. This technology is expected to allow chips that have SRAM speed, DRAM cost and FLASH power characteristic and non-volatility. Chalcogenide is a confirmed phase change material used in re-writeable CDs and DVDs. This material changes phases reversibly and quickly between an amorphous state with high resistivity and a crystalline state with low resistivity. Previously, GeSbTe system has been known as pseudobinary GeTe and Sb@sub 2@Te@sub 3@ alloys with different combinations, such as Ge@sub 2@Sb@sub 2@Te@sub 5@, Ge@sub 1@Sb@sub 2@Te@sub 4@, and Ge@sub 1@Sb@sub 4@Te@sub 7@. Recently GeTe-Sb@sub 2@Te@sub 3@ multi-layer structure is studied to improve crystallization time and rewrite cycle time in optical data storage. We investigated interface reaction and crystallization property between GeTe and Sb@sub 2@Te@sub 3@ thin film to observe a created composition at interface in variable annealing temperature and methods. The GeTe-Sb@sub 2@Te@sub 3@ film was deposited on SiO@sub 2@ by D.C. magnetron sputtering method with GeTe and Sb@sub 2@Te@sub 3@ alloy target. The thickness of each layer is 10nm. After the deposition of GeTe-Sb@sub 2@Te@sub 3@ film, TiN was deposited in a same chamber without breaking vacuum as a capping layer. Sample was annealed at temperature between 200°C and 700°C using furnace and RTP. To study crystallization behavior, XRD analysis were performed. In addition, the sheet resistance was measured by using 4-point probe. TEM analysis was performed to investigate interface reaction between GeTe and Sb@sub 2@Te@sub 3@ thin film. And to observe distribution of each element atom in interface reaction, AES depth profile and EDX were carried out.