AVS 50th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EM-WeP

Paper SC+EM-WeP1
STM Observation of Dopant Atoms and Point Defects in the p-type GaAs (110) Surface at 5K

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: G. Mahieu, IEMN-CNRS, France
Authors: B. Grandidier, IEMN-CNRS, France
G. Mahieu, IEMN-CNRS, France
D. Deresmes, IEMN-CNRS, France
J.P. Nys, IEMN-CNRS, France
D. Stievenard, IEMN-CNRS, France
P. Ebert, IFF-Julich, Germany
Correspondent: Click to Email
Cross-sectional scanning tunneling microscopy (STM) is used to study dopant atoms and point defects exposed on and in cleaved p-type doped GaAs (110) surfaces at 5K. While Zn dopant atoms have been already characterized in the past, spatial mapping of the conductance variation on individual dopants gives new insights in the origin of the triangular shaped features generally observed if the tip Fermi level is near the bottom of the conduction band. Combining empty and filled state images, we also identify As antisites and complex of vacancies. The stability of complex vacancies are discussed in the light of the available theoretical information.