| AVS 50th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS-TuA1 Invited Paper Dielectric Etch: Past, Present and Future T.J. Dalton, IBM Research |
| 2:40pm | PS-TuA3 Depth Dependent Spatial Frequency Analysis of Post-Etch Sidewall Roughness S.A. Rasgon, H.H. Sawin, Massachusetts Institute of Technology, A.P. Mahorowala, D. Goldfarb, M. Angelopoulos, IBM T.J. Watson Research Center, S.D. Allen, IBM Microelectronics Division |
| 3:00pm | PS-TuA4 Investigation of Bottom-emitted Particles and their Influence on the Etch Characteristics of Sidewall in the Fluorocarbon Plasma Etching G.-R. Lee, J.-H. Min, J.-K. Lee, S.H. Moon, Seoul National University, Korea |
| 3:20pm | PS-TuA5 Bilayer Mask Process for sub-90 nm Patterning using a New 100MHz CCP RIE H. Hayashi, J. Abe, A. Kojima, J. Nishiwaki, A. Takase, K. Sho, E. Shiobara, I. Sakai, E. Shinomiya, T. Ohiwa, TOSHIBA Corporation Semiconductor Company, Japan |
| 3:40pm | PS-TuA6 Etching Bilayer Resists in Ammonia Based Plasmas S. Panda, R. Wise, A.P. Mahorowala, IBM |
| 4:00pm | PS-TuA7 Model for Dielectric Etching in C@sub 4@F@sub 6@ Based Inductively Coupled and Dual Frequency Plasmas S. Rauf, P.J. Stout, P. Ventzek, Motorola Semiconductor Products Sector, S. Adamson, A. Dementev, K. Novoselov, V. Kudrja, Soft-Tec, Moscow, Russia |
| 4:20pm | PS-TuA8 A Computational Investigation of Plasma and Surface Chemistry During Fluorocarbon Plasma Etching of SiO@sub 2@ in Ar/c-C@sub 4@F@sub 8@/O@sub 2@/CO Magnetically Enhanced Capacitively and Inductively Coupled Plasmas@footnote 1@ A.V. Vasenkov, M.J. Kushner, University of Illinois at Urbana-Champaign |
| 4:40pm | PS-TuA9 Kinetic Study on SiO@sub 2@ Dry Etching Process by Chemical Reaction Engineering Approach T. Tokimitsu, Y. Shimogaki, University of Tokyo, Japan |
| 5:00pm | PS-TuA10 Selective Silicon Nitride Etching by ECR Plasmas Using SF6 and NF3 Based Gas Mixtures C. Reyes-Betanzo, INAOE- Instituto Nacional de Astrofisica, Mexico, S.A. Moshkalyov, A.C.S. Ramos, J.W. Swart, UNICAMP, Brazil |