AVS 50th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuA

Paper PS-TuA7
Model for Dielectric Etching in C@sub 4@F@sub 6@ Based Inductively Coupled and Dual Frequency Plasmas

Tuesday, November 4, 2003, 4:00 pm, Room 315

Session: Dielectric Etch
Presenter: S. Rauf, Motorola Semiconductor Products Sector
Authors: S. Rauf, Motorola Semiconductor Products Sector
P.J. Stout, Motorola Semiconductor Products Sector
P. Ventzek, Motorola Semiconductor Products Sector
S. Adamson, Soft-Tec, Moscow, Russia
A. Dementev, Soft-Tec, Moscow, Russia
K. Novoselov, Soft-Tec, Moscow, Russia
V. Kudrja, Soft-Tec, Moscow, Russia
Correspondent: Click to Email
1,3 Perfluorobutadiene (C@sub 4@F@sub 6@) has recently received much attention in the microelectronics industry for etching of conventional and low-@kappa@ dielectrics. This consideration is motivated in part due to the environmentally benign nature of C@sub 4@F@sub 6@, and its desirable etching and polymerizing characteristics. This paper describes a model for etching of SiO@sub 2@ and Si in medium and high density Ar/C@sub 4@F@sub 6@/O@sub 2@ plasmas. The plasma chemical mechanism for C@sub 4@F@sub 6@ is assembled using measured dissociative ionization and attachment cross-sections, and first principle based computations of C@sub 4@F@sub 6@ neutral dissociation kinetics and cross-sections. The plasma surface interaction mechanism has been constructed empirically by correlating computed species characteristics with experimentally measured etching and deposition rates. Computational modeling of the plasma and surface processes is conducted using a combination of 2-dimensional plasma equipment models (HPEM@footnote 1@ from University of Illinois and IO)@footnote 2@ and feature scale simulations (BabyBean@footnote 3@ and Papaya).@footnote 4@ The paper discusses experimental validation of the model in two disparate plasma operating regimes, ICP@footnote 5@ and dual frequency.@footnote 6@ The model is also used to understand the differences in plasma chemistry of medium and high density C@sub 4@F@sub 6@ based plasmas, and how these differences impact dielectric etching characteristics. @FootnoteText@ @footnote 1@P. L. G. Ventzek et al., J. Vac. Sci. Technol. B 12, 461 (1994)@footnote 2@S. Rauf, to appear in IEEE Trans. Plasma Sci. (Aug. 2003)@footnote 3@S. Rauf et al., J. Vac. Sci. Technol. A 20, 1177 (2002)@footnote 4@P. J. Stout et al., J. Vac. Sci. Technol. A 21, 265 (2003)@footnote 5@X. Li et al., J. Vac. Sci. Technol. A 20, 2052 (2002)@footnote 6@F. Fracassi et al., J. Vac. Sci. Technol. A 21, 638 (2003).