| AVS 50th International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-MoM1 Invited Paper Not Quite 50 Years of Plasma Etching R.A. Gottscho, Lam Research Corp. |
| 9:00am | PS-MoM3 Chemical Topography Analyses of Photoresist Patterns Exposed to HBr/O2 and Cl2/O2 Trimming Plasma Processes E. Pargon, O. Joubert, L. Vallier, CNRS/LTM, France, S. Xu, Applied Materials |
| 9:20am | PS-MoM4 Aspect Ratio Dependent Etching in the Si-Treatment Process of the Source and Drain Area of sub 90 nm Devices K.H. Bai, M.C. Kim, B.Y. Nam, K.K. Chi, C.J. Kang, W.S. Han, J.T. Moon, Samsung Electronics Co., Korea |
| 9:40am | PS-MoM5 Loading Effect Study on Cl@sub 2@+HBr Plasma Etching of Polysilicon W. Jin, H.H. Sawin, Massachusetts Institute of Technology |
| 10:00am | PS-MoM6 Pattern Deformations during Resist Trimming Process and its Suppression by He-diluted O@sub 2@/SO@sub 2@ Chemistry H. Morioka, M. Tajima, M. Terahara, M. Nakaishi, I. Hanyu, Fujitsu Limited, Japan |
| 10:20am | PS-MoM7 On the Roughness of Etched Silicon A.A.E. Stevens, H.C.W. Beijerinck, Eindhoven University of Technology, The Netherlands |
| 10:40am | PS-MoM8 Investigation of Trim Etching Process for Formation of Si/High-K Gate Stack K.M. Tan, W.J. Yoo, National University of Singapore, L. Chan, Chartered Semiconductor Manufacturing, Singapore |
| 11:00am | PS-MoM9 50nm Gate Electrode Patterning using a Neutral Beam Etching System S. Noda, S. Samukawa, Tohoku University, Japan, H. Nishimori, T. Ida, T. Arikado, Semiconductor Leading Edge Technologies, Inc. (Selete), Japan, K. Ichiki, Ebara Research Co., Ltd., Japan |
| 11:20am | PS-MoM10 Surface and Reactor Dynamics Governing Photoresist Trim and Organic BARC Open Plasma Processing D.J. Cooperberg, Lam Research Corporation, S. Johnston, D. Horak, IBM Microelectronics, V. Vahedi, Lam Research Corporation |
| 11:40am | PS-MoM11 3-Dimensional Modeling of Pulsed Inductively Coupled Plasmas: A Method to Improve Uniformity@footnote 1@ P. Subramonium, M.J. Kushner, University of Illinois at Urbana-Champaign |