| AVS 50th International Symposium | |
| High-k Gate Dielectrics and Devices Topical Conference | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| DI-TuP1 Investigation of Initial Growth Stage of HfO@sub 2@ Films on Si (100) Grown by Atomic-layer Deposition using In-situ Medium Energy Ion Scattering H.S. Chang, H. Hwang, Kwangju Institute of Science and Technology (KJIST), South Korea, M.-H. Cho, Y.J. Cho, K.J. Kim, D.W. Moon, Korean Research Institute of Standards and Science (KRISS), South Korea |
| DI-TuP2 Effects of Annealing Temperature on the Characteristics of HfO@sub 2@/HfSi@sub x@O@sub y@ High-k Gate Oxides H.-D. Kim, Y. Roh, D. Jung, N.-E. Lee, Sungkyunkwan University, Korea |
| DI-TuP3 Thermal Stability of Al- and Zr- doped HfO@sub 2@ Thin Films by DC Magnetron Sputtering Y.E. Hong, Y.S. Kim, D.H. Ko, D.W. Lee, Yonsei University, South Korea, J.-H. Ku, Samsung Electronics, South Korea |
| DI-TuP5 NH@sub 3@ Nitridation Effect on HfO@sub 2@-Al@sub 2@O@sub 3@ Films in the MOS Capacitor C. Lee, J. Choi, M. Cho, C.S. Hwang, H.J. Kim, Seoul National University, Korea |
| DI-TuP6 Structural and Electrical Characterization of Aluminum Oxynitride Thin Films Obtained by RF-Sputtering J.J. Araiza, UAZ, Mexico, M.A. Aguilar, CICATA-IPN, Mexico, C. Falcony, M. Jergel, CINVESTAV-IPN, Mexico |
| DI-TuP7 Plasma and Thermal Etching of High-k Materials for ALD Chamber Cleaning B. Ji, D. Wu, R.M. Pearlstein, S.A. Motika, E.J. Karwacki, M.J. Plishka, Air Products and Chemicals, Inc. |