AVS 50th International Symposium
    High-k Gate Dielectrics and Devices Topical Conference Tuesday Sessions
       Session DI-TuP

Paper DI-TuP6
Structural and Electrical Characterization of Aluminum Oxynitride Thin Films Obtained by RF-Sputtering

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: J.J. Araiza, UAZ, Mexico
Authors: J.J. Araiza, UAZ, Mexico
M.A. Aguilar, CICATA-IPN, Mexico
C. Falcony, CINVESTAV-IPN, Mexico
M. Jergel, CINVESTAV-IPN, Mexico
Correspondent: Click to Email
The structural and electrical characteristics of aluminum oxynitride thin films deposited on silicon substrates by rf-sputtering are reported. The properties of the films were studied as a function of the deposition parameters, such as substrate temperature, RF sputtering power and the relative amount of argon and nitrogen gases introduced to the chamber. The films were characterized by atomic force microscopy, transmission and scanning electron microscopy, X ray diffraction, Infrared and Uv-vis spectroscopy and ellipsometry. Metal-Oxide-Semiconductors structures were also fabricated with the films deposited. Films with characteristics close to aluminum oxide and aluminum nitride were obtained, depending on the deposition parameters. It was found that the films can withstand electric fields up to 4.5 MV/cm, without observing destructive breakdown, with dielectric constants up to 8.7. In addition, the as deposited films present a surface roughness lower than 1.6 nm, refractive indexes from 1.5 to 2.0 and deposition rates up to 7.0 nm/min.