AVS 50th International Symposium
    High-k Gate Dielectrics and Devices Topical Conference Tuesday Sessions
       Session DI-TuP

Paper DI-TuP1
Investigation of Initial Growth Stage of HfO@sub 2@ Films on Si (100) Grown by Atomic-layer Deposition using In-situ Medium Energy Ion Scattering

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: H.S. Chang, Kwangju Institute of Science and Technology (KJIST), South Korea
Authors: H.S. Chang, Kwangju Institute of Science and Technology (KJIST), South Korea
H. Hwang, Kwangju Institute of Science and Technology (KJIST), South Korea
M.-H. Cho, Korean Research Institute of Standards and Science (KRISS), South Korea
Y.J. Cho, Korean Research Institute of Standards and Science (KRISS), South Korea
K.J. Kim, Korean Research Institute of Standards and Science (KRISS), South Korea
D.W. Moon, Korean Research Institute of Standards and Science (KRISS), South Korea
Correspondent: Click to Email
The initial growth stage of HfO@sub 2@ films on p-type Si(100) grown by atomic-layer deposition (ALD) was investigated using in-situ medium energy ion scattering (MEIS). The interaction between adsorbed HfCl@sub 4@ molecules and Si substrate was examined in relation to the film thickness, substrate temperatures, and surface states of the Si substrates. Interfacial reaction between Hf and Si at the initial growth stage was occurred and significantly depended on the surface state of the Si. The hafnium silicate with an amorphous structure was grown on the oxidized Si substrate at an initial growth stage. In particular, the interfacial layer thickness and the stoichiometry of the layer were depended on the surface state of Si substrate. As thickness of the film increased, the silicate formation was gradually changed into HfO@sub 2@ state. The physical analysis of the films with XPS and TEM also supported the interfacial reactions. Based on the interfacial interaction at the initial growth stage, we suggested the model for the interaction between Hf and Si at the initial growth stage in relation to the atomic size, bonding characteristics, and formation energy. This study will be helpful to understand the interfacial reactions at the initial growth stage and to control the reactions for the application of high-k dielectrics.