| AVS 50th International Symposium | |
| High-k Gate Dielectrics and Devices Topical Conference | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | DI-TuM1 Invited Paper Effects of Transistor Fabrication Process Conditions on Electrical Characteristics of High-k Gate Dielectrics G. Bersuker, P. Zeitzoff, G.A. Brown, J. Gutt, N. Moumen, J. Peterson, J. Barnett, B.H. Lee, C.H. Lee, S. Gopalan, N. Chaudhary, Y. Kim, C. Young, P.S. Lysaght, H.-J. Li, M. Gardner, R.W. Murto, H.R. Huff, International Sematech |
| 9:00am | DI-TuM3 Characteristics of High-k Gate Dielectric Formed by Oxidation of Sputtered Hf/Zr/Hf Thin Fims on the Si Substrate H.-D. Kim, Y. Roh, N.-E. Lee, C.-W. Yang, Sungkyunkwan University, Korea |
| 9:40am | DI-TuM5 Study of ZrO@sub 2@ Initial Stage Deposition on Si(100) During High Vacuum Chemical Vapor Deposition Z. Song, R.D. Geil, D.J. Crunkleton, V.L. Wahlig, B.R. Rogers, Vanderbilt University |
| 10:00am | DI-TuM6 Thin Film Growth and Composition Characterization of Hafnium Oxide Grown on Surface Treated Silicon by Atomic Layer Deposition R. Inman, A. Deshpande, G. Jursich, American Air Liquide |
| 10:20am | DI-TuM7 The Effect of Hf Content in Liquid Precursor on the Properties of Mist Deposited Ultra-Thin Films of HfSiO@sub 4@ K. Chang, K. Shanmugasundaram, The Pennsylvania State University, D.-O. Lee, P. Roman, P. Mumbauer, Primaxx Inc., J.R. Ruzyllo, The Pennsylvania State University |
| 10:40am | DI-TuM8 The Effect of Surface Preparation and Post Growth Annealing on the Thickness and Composition of High-k Layers Grown on Silicon T. Conard, IMEC, Belgium, R.K. Champaneria, P. Mack, Thermo Electron, UK, R.G. Vitchev, Facultes Universitaires Notre-Dame De La Paix (FUNDP), Belgium, R.G. White, J. Wolstenholme, Thermo Electron, UK |
| 11:00am | DI-TuM9 Si and Ge Surface Functionalization Characterized by In Situ and Ex Situ Infrared Spectroscopy M.M. Frank, IBM T.J. Watson Research Center and Rutgers University, M.-T. Ho, S. Dörmann, C.-L. Hsueh, Rutgers University, L.J. Webb, N.S. Lewis, California Institute of Technology, S. Rivillon, Rutgers University, O. Pluchery, Université Paris 6, France, Y.J. Chabal, Rutgers University |
| 11:20am | DI-TuM10 Plasma Deposition of RuO@sub2@ on HfO@sub2@ for Gate Electrode Applications D.B. Terry, J.M. Doub, G.N. Parsons, North Carolina State University |
| 11:40am | DI-TuM11 Novel Ultra-thin TiAlO@sub x@ Alloy Oxide for New Generation of Gate Dielectric W. Fan, Northwestern University, S. Saha, B. Kabius, J.M. Miller, J.A. Carlisle, O. Auciello, Argonne National Laboratory, S.Y. Li, V.P. Dravid, R.P.H. Chang, Northwestern University, C. Lopes, E.A. Irene, University of North Carolina, Chapel Hill |