AVS 50th International Symposium
    High-k Gate Dielectrics and Devices Topical Conference Tuesday Sessions
       Session DI-TuM

Paper DI-TuM5
Study of ZrO@sub 2@ Initial Stage Deposition on Si(100) During High Vacuum Chemical Vapor Deposition

Tuesday, November 4, 2003, 9:40 am, Room 317

Session: High-k Dielectric Growth and Processing
Presenter: Z. Song, Vanderbilt University
Authors: Z. Song, Vanderbilt University
R.D. Geil, Vanderbilt University
D.J. Crunkleton, Vanderbilt University
V.L. Wahlig, Vanderbilt University
B.R. Rogers, Vanderbilt University
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ZrO@sub 2@ is a potential high-k material to replace SiO@sub 2@ gate dielectrics in MOSFET devices. Electrical and structural requirements of the gate dielectric dictate that these layers will be significantly less than 10 nm thick. Studies of the initial stages of ZrO@sub 2@ deposition is needed in order to create an abrupt, low defect interface with silicon. In this work, we used atomic force microscopy (AFM), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) to study the initial deposition behavior of ZrO@sub 2@ films. Films were deposited at pressures of 10@super -5@ to 10@super -4@ Torr and substrate temperatures of 250 to 450 °C. We observed a transition from 3D growth to 2D growth. These results suggest that a deposition temperature greater than 350 °C is needed to form a uniform film.