| 8:20am |
DI-MoM1 Invited Paper
Attempting the Unthinkable: Replacing SiO@sub 2@ with High-k Materials as the Gate Dielectric for Scaled Devices
G.D. Wilk, ASM |
| 9:00am |
DI-MoM3 Invited Paper
Challenges and Progress on High-K Devices and Materials
H.-H. Tseng, Motorola |
| 9:40am |
DI-MoM5
First Principles Studies of the Electronic and Atomic Structures of ZrO@sub 2@/Si and ZrSiO@sub 4@/Si Interfaces
R. Puthenkovilakam, Y.-S. Lin, J.P. Chang, University of California, Los Angeles |
| 10:00am |
DI-MoM6
X-ray Photoelectron Spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) Study of Hafnium Silicate Alloys Prepared by Remote Plasma Assisted Chemical Vapor Deposition: Comparisons between Conduction Band Offset Energies and Optical Band Gaps
J.G. Hong, N.A. Stoute, G. Lucovsky, D.E. Aspnes, North Carolina State University |
| 10:20am |
DI-MoM7 Invited Paper
Photoemission Study of High-k Gate Dielectric/Si(100) Heterostructures - Chemical Bonding Features and Energy Band Alignment
S. Miyazaki, Hiroshima University, Japan |
| 11:00am |
DI-MoM9
Separate and Independent Control of Interfacial Band Alignments and Dielectric Constants in Transition Metal-rare Earth Ternary Oxides
D.G. Schlom, Pennsylvania State University, J.L. Freeouf, Oregon Graduate Institute, G. Lucovsky, North Carolina State University |
| 11:20am |
DI-MoM10
A Materials and Electronics Properties Study of the ZrO@sub 2@/Si and SiO@sub 2@ Interfaces
C.M. Lopez, N.A. Suvorova, University of North Carolina, Chapel Hill, A.A. Suvorova, M. Saunders, University of Western Australia, E.A. Irene, University of North Carolina, Chapel Hill |
| 11:40am |
DI-MoM11
Interface and Materials Properties of High-k Gate Stack Structures
S. Sayan, X. Zhao, R.A. Bartynski, T. Emge, M. Croft, T. Gustafsson, D. Vanderbilt, E.L. Garfunkel, Rutgers University |