| AVS 50th International Symposium | |
| High-k Gate Dielectrics and Devices Topical Conference | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | DI-MoA1 Invited Paper Etching and Thermal Stability of Zirconium and Hafnium Oxide High-k Dielectrics J.P. Chang, University of California, Los Angeles |
| 2:40pm | DI-MoA3 Invited Paper Structure and Stability of Alternative High-K Gate Dielectrics S. Stemmer, University of California, Santa Barbara |
| 3:20pm | DI-MoA5 Hafnium Silicate High-K Dielectric Etch with High Selectivity to Si at Low Wafer Temperatures S. Ramalingam, Lam Research Corporation, C.B. Labelle, Advanced Micro Devices, S.D. Lee, G.P. Kota, C. Lee, V. Vahedi, Lam Research Corporation |
| 3:40pm | DI-MoA6 Post Deposition Stability of High-k Dielectrics to Air Exposure and its Implications to Interface Reactivity T. Gougousi, D. Niu, R.W. Ashcraft, G.N. Parsons, North Carolina State University |
| 4:00pm | DI-MoA7 Invited Paper Growth, Characterization and Thermal Stability of High-K Gate Stacks E.L. Garfunkel, T. Gustafsson, D.G. Starodub, S. Sayan, L.V. Goncharova, D. Vanderbilt, X. Zhao, R.A. Bartynski, Rutgers University, T. Nishimura, Murai Project, Japan, Y.J. Chabal, Rutgers University |
| 4:40pm | DI-MoA9 Hafnium Germanosilicate Thin Films for Gate and Capacitor Dielectric Applications: Thermal Stability Studies S. Addepalli, P. Sivasubramani, P. Zhao, M.J. Kim, M. El-Bouanani, B.E. Gnade, R.M. Wallace, University of North Texas |