AVS 49th International Symposium | |
Dielectrics | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | DI+EL-ThA1 Plasma Etch Processes for Ferroelectric Memory Integration F.G. Celii, M. Thakre, S. Summerfelt, S. Aggarwal, J.S. Martin, K.R. Udayakumar, T.S. Moise, Texas Instruments |
2:20pm | DI+EL-ThA2 Electrical Properties of the Bi@sub 4-x@La@sub x@Ti@sub 3@O@sub 12@ Films Etched in Cl@sub 2@/Ar Inductively D.P. Kim, C.I. Kim, K.T. Kim, Chung-Ang University, Korea, A.M. Efremov, Ivanovo State University of Chemistry and Technology, Russia |
2:40pm | DI+EL-ThA3 Formation of Al Oxynitride Alloys by Low-temperature Remote Plasma Nitridation C. Hinkle, G. Lucovsky, North Carolina State University |
3:00pm | DI+EL-ThA4 Heterostructured Cu-Based Electrode for High-Dielectric Constant Oxide Thin Film Devices W. Fan, Northwestern University, O. Auciello, S. Saha, J.A. Carlisle, D.M. Gruen, Argonne National Laboratory, R.P.H. Chang, Northwestern University, R. Ramesh, University of Maryland |
3:20pm | DI+EL-ThA5 Investigation of the Interfacial Region of (Ba,Sr)TiO@sub 3@ Thin Films Deposited on Pt Substrates by MOCVD T.C. Kaspar, University of Washington, L.V. Saraf, C.L. Aardahl, J.W. Rogers, Jr., Pacific Northwest National Laboratory, T.S. Dory, Intel Corporation |
3:40pm | DI+EL-ThA6 Reduction of the k Value of the Low k Polyimide Film by Plasma Hydrogenation Y. Kuo, T. Chung, Texas A&M University |
4:00pm | DI+EL-ThA7 Materials Transformation and Kinetics in the Formation of Porous Low-K Polymer Dielectrics for Advanced Interconnect Technology P. Lazzeri, L. Vanzetti, M. Bersani, M. Anderle, ITC-irst, Italy, J.J. Park, Z. Lin, G.Y. Yang, R.M. Briber, G.W. Rubloff, University of Maryland, R.D. Miller, IBM Research |
4:20pm | DI+EL-ThA8 Fluorinated Amorphous Carbon Films Prepared by Plasma Enhanced Chemical Vapor Deposition for Solar Cell Applications L. Valentini, University of Perugia, Italy, V. Salerni, University of L'Aquila, Italy, I. Armentano, J.M. Kenny, University of Perugia, Italy, L. Lozzi, S. Santucci, University of L'Aquila, Italy |
4:40pm | DI+EL-ThA9 Dopant Penetration Studies in Hf Based Gate Dielectrics from Doped Polysilicon Films: Effect of Nitrogen in Penetration Robustness M.A. Quevedo-Lopez, H. Zhang, M.J. Kim, M. El-Bouanani, B.E. Gnade, R.M. Wallace, University of North Texas, M.R. Visokay, A. Li-Fateau, J.J. Chambers, A.L.P. Rotondaro, L. Colombo, Texas Instruments Inc. |
5:00pm | DI+EL-ThA10 Nanoporous MSSQ Films Characterised by Surface Acoustic Wave Spectroscopy and Brillouin Light Scattering C.M. Flannery, Colorado School of Mines, T. Wittkowski, K. Jung, B. Hillebrands, Universitaet Kaiserslautern, Germany, M.R. Baklanov, IMEC, Belgium, D.C. Hurley, National Institute of Standards and Technology |