AVS 49th International Symposium
    Dielectrics Thursday Sessions
       Session DI+EL-ThA

Paper DI+EL-ThA8
Fluorinated Amorphous Carbon Films Prepared by Plasma Enhanced Chemical Vapor Deposition for Solar Cell Applications

Thursday, November 7, 2002, 4:20 pm, Room C-107

Session: Processing and Properties of Dielectric Materials
Presenter: L. Valentini, University of Perugia, Italy
Authors: L. Valentini, University of Perugia, Italy
V. Salerni, University of L'Aquila, Italy
I. Armentano, University of Perugia, Italy
J.M. Kenny, University of Perugia, Italy
L. Lozzi, University of L'Aquila, Italy
S. Santucci, University of L'Aquila, Italy
Correspondent: Click to Email
Amorphous carbon a-C or a-C:H and/or diamond-like-carbon (DLC), has attracted attention as an environmentally benign and economically viable optoelectronic device material over others such as amorphous silicon (a-Si and/or a-Si:H) due to various advantage and therefore possibility to replace the existing technology based on the a-Si/a-Si:H.@footnote 1@ Heterojunction diodes fabricated by plasma enhanced chemical vapor deposition of n-type fluorine-doped amorphous carbon (a-C:H:F) on p-type silicon are analyzed in terms of their electronic and photoresponse properties. The nature of heterojunction is confirmed by the rectifying current-voltage characteristic of a-C:H:F/p-Si junction. The photovoltaic behavior of the junction is presented as a function of both fluorine incorporation and thermal treatment of the a-C:H:F films after the deposition. The diodes made show a behavior dependent on the amount of the fluorine content. A better photovoltaic effects was observed from annealed a-C:H:F heterojunction structures. The optical and structural characterization performed by Raman spectroscopy and UV-VIS transmittance on films after the thermal treatment indicates that this behaviour is most likely due to an extended graphitization. @FootnoteText@ @footnote 1@H. A. Yu, Y. Kaneko, S. Yoshimura, and S. Otani, Appl. Phys. Lett. 68 (1996) 547.