AVS 49th International Symposium
    Dielectrics Thursday Sessions
       Session DI+EL-ThA

Paper DI+EL-ThA9
Dopant Penetration Studies in Hf Based Gate Dielectrics from Doped Polysilicon Films: Effect of Nitrogen in Penetration Robustness

Thursday, November 7, 2002, 4:40 pm, Room C-107

Session: Processing and Properties of Dielectric Materials
Presenter: M.A. Quevedo-Lopez, University of North Texas
Authors: M.A. Quevedo-Lopez, University of North Texas
H. Zhang, University of North Texas
M.J. Kim, University of North Texas
M. El-Bouanani, University of North Texas
B.E. Gnade, University of North Texas
R.M. Wallace, University of North Texas
M.R. Visokay, Texas Instruments Inc.
A. Li-Fateau, Texas Instruments Inc.
J.J. Chambers, Texas Instruments Inc.
A.L.P. Rotondaro, Texas Instruments Inc.
L. Colombo, Texas Instruments Inc.
Correspondent: Click to Email
As the aggressively scaling of CMOS technology continues, high-@kappa@ gate dielectrics become one of the solutions in providing increased capacitance without remarkable increase in gate leakage current. However, issues such as thermal stability@footnote 1@ and dopant penetration still require further study. Hf based films have been proposed as suitable candidates for advanced gate dielectric applications.@footnote 2@ However, dopant penetration (B, As, P) following dopant activation annealing needs to be investigated. Recently, nitrogen incorporation in HfSi@sub x@O@sub y@ has been shown to be an efficient way to improve the thermal stability of Hf-silicate films, without compromising the electrical performance.@footnote 3@ Dopant penetration studies (experimental and modeling) of boron, arsenic, and phosphorous from doped poly-crystalline silicon (poly-Si) through 4-5 nm thick HfSi@sub x@O@sub y@ and HfSi@sub x@O@sub y@N@sub z@ into Si after aggressive annealing will be presented. XPS, HRTEM, RBS, and DSIMS results are presented. Dopant diffusivities in the dielectric films are calculated by fitting the dopant profile in the Si substrate to a reported model.@footnote 4@ Implications for the use of these films as high-@kappa@ gate dielectrics on CMOS processing are also discussed. This work was supported by the Texas Advanced Technology Program, the Semiconductor Research Corporation, Texas Instruments, and DARPA. @FootnoteText@ @footnote 1@ M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L.Duggan, B. E. Gnade R. M. Wallace M.R.Visokay, M. Douglas, M.J. Bevan, and L. ColomboAppl. Phys. Lett. 79 (2001) 2958.@footnote 2@ For a review, see: G.D. Wilk, R.M. Wallace, and J. M. Anthony. J. Appl. Phys. 89, 5243 (2001).@footnote 3@ M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, A. Shanware, and L. Colombo, Appl.. Phys. Lett. 80, 3183 (2002).@footnote 4@ C. T. Sah, H. Sello, and D. A. Tremere, J. Phys.:Condens. Matter. 11, 288 (1959).