| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Electronics | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EL-WeA1 Invited Paper Epitaxial Growth by Low-energy Plasma-enhanced CVD H. von Känel, ETH Zürich, Switzerland, M. Kummer, A. Dommann, Interstate University of Applied Science, Switzerland, C. Rosenblad, J. Ramm, Unaxis Semiconductors, Liechtenstein, T. Hackbarth, M. Zeuner, Daimler Chrysler Research Center, Germany |
| 2:40pm | EL-WeA3 Self-Limited Layer-by-Layer Growth of Si by Alternated SiH@sub4@ Supply and Ar Plasma Exposure D. Muto, T. Seino, T. Matsuura, J. Murota, Tohoku University, Japan |
| 3:00pm | EL-WeA4 Detrimental Effects in using Surfactant Assisted Growth G.G. Jernigan, P.E. Thompson, M. Fatemi, M.E. Twigg, U.S. Naval Research Laboratory |
| 3:20pm | EL-WeA5 Optical and Structural Characterization of GaN Films Grown by Molecular Beam Epitaxy on SiC Coated Si Substrates M. Lopez-Lopez, M. Cervantes-Contreras, M. Melendez-Lira, M. Tamura, CINVESTAV-IPN, Mexico |
| 3:40pm | EL-WeA6 Detailed Modeling of Si Gas-source MBE: Descriptions on Growth Rate and Hydrogen Coverage T. Murata, M. Suemitsu, Tohoku University, Japan |
| 4:00pm | EL-WeA7 Growth and Doping Kinetics in Si Gas-source MBE with In-situ Phosphrous-doping M. Suemitsu, Y. Tsukidate, Tohoku University, Japan |
| 4:40pm | EL-WeA9 Improved Surface Preparation for High Quality Homoepitaxial Growth of SiC W.V. Lampert, C.J. Eiting, S.A. Smith, L. Grazulis, J.S. Solomon, T.W. Haas, Air Force Research Laboratory, Materials and Manufacturing Directorate |
| 5:00pm | EL-WeA10 Initial Stages of Al@sub x@Se@sub y@ Heteroepitaxial Growth on Si(111) J.A. Adams, A.A. Bostwick, University of Washington, E. Rotenberg, Advanced Light Source, Berkeley, F.S. Ohuchi, M.A. Olmstead, University of Washington |