IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Wednesday Sessions
       Session EL-WeA

Paper EL-WeA4
Detrimental Effects in using Surfactant Assisted Growth

Wednesday, October 31, 2001, 3:00 pm, Room 124

Session: Semiconductor Growth
Presenter: G.G. Jernigan, U.S. Naval Research Laboratory
Authors: G.G. Jernigan, U.S. Naval Research Laboratory
P.E. Thompson, U.S. Naval Research Laboratory
M. Fatemi, U.S. Naval Research Laboratory
M.E. Twigg, U.S. Naval Research Laboratory
Correspondent: Click to Email
Using STM, XPS, TEM, and XRD, we have investigated the use of Sb as a surfactant for the growth of SiGe quantum wells (QW) by molecular beam epitaxy. Our XPS results indicated that Ge surface segregation was inhibited from a Si capping layer after the growth of the QW with the use of an Sb surfactant, but Ge segregation during the growth of the QW was only partially prevented by the Sb surfactant. The differing effect Sb had on the start and the end of the growth of a SiGe QW led us to believe that something additional to the suppression of Ge segregation was occurring. An XRD analysis of many QW samples showed that Sb did not relieve strain in the SiGe QW but resulted in broader diffraction peaks due to compositional fluctuations within the QW. In agreement with the XRD, TEM showed that there was a greater amount of strain contrast within the QW due to compositional fluctuations. We will report our most recent results, using an in situ STM, which shows that Sb surfactant assisted growth has the detrimental effect of roughening the Si and SiGe surface while making the interface more compositionally abrupt.