IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Wednesday Sessions
       Session EL-WeA

Paper EL-WeA3
Self-Limited Layer-by-Layer Growth of Si by Alternated SiH@sub4@ Supply and Ar Plasma Exposure

Wednesday, October 31, 2001, 2:40 pm, Room 124

Session: Semiconductor Growth
Presenter: D. Muto, Tohoku University, Japan
Authors: D. Muto, Tohoku University, Japan
T. Seino, Tohoku University, Japan
T. Matsuura, Tohoku University, Japan
J. Murota, Tohoku University, Japan
Correspondent: Click to Email
Self-limited layer-by-layer growth of Si without substrate heating has been investigated using ECR plasma. First, 5Å-thick epitaxial Si films on Si(100) were continuously deposited by Ar plasma with SiH@sub4@ at the Ar pressure of 16mTorr and the SiH@sub4@ partial pressure of 0.02mTorr with the microwave power of 800W. Then, by alternated SiH@sub4@ supply for 2min at the pressure of 10mTorr and the Ar plasma exposure for 5 or 20 sec at the pressure of 16mTorr with the microwave power of 200W, atomic-order Si epitaxial growth was carried out. The deposited Si films thickness was determined by AFM. Surface structure and hydrogen termination on the Si surface were evaluated by RHEED and FTIR/RAS, respectively. For the alternated process on the wet-treated surface, the Si deposition was scarcely observed on the wet-treated surface by the alternated process. By the continuous deposition, the wet-treated surface changed the dimer monohydride structure. As a result, the deposition rate was 0.3Å/cycle when the Ar plasma exposure time was 5sec. In this deposition cycle, the intensity of the dimer monohydride after SiH@sub4@ exposure was about 2/3 as that after Ar plasma exposure. When the Ar plasma exposure time increased to 20sec, the deposition rate was 0.5Å/cycle. The intensity of dimer monohydride was higher than that of 5sec Ar plasma exposure. These results mean that SiH@sub4@ molecule is adsorbed on the dimer monohydride structure, next Si epitaxial growth with the generation of the dimer monohydride structure is performed due to decomposition of adsorbed SiH@sub4@ by Ar plasma exposure. In conclusion, atomic-order layer-by-layer epitaxial growth of Si is achieved by SiH@sub4@ self-limited adsorption and enhanced reaction due to Ar plasma exposure.