IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Wednesday Sessions
       Session EL-WeA

Paper EL-WeA7
Growth and Doping Kinetics in Si Gas-source MBE with In-situ Phosphrous-doping

Wednesday, October 31, 2001, 4:00 pm, Room 124

Session: Semiconductor Growth
Presenter: M. Suemitsu, Tohoku University, Japan
Authors: M. Suemitsu, Tohoku University, Japan
Y. Tsukidate, Tohoku University, Japan
Correspondent: Click to Email
Being free of ion damages and redistribution of dopants during post-anneals in ion implantation, in-situ doped epitaxy is attracting renewed attention in ULSI processings. Remaining barriers are found mostly in N-type doping, where addition of PH@sub 3@ exhibits notable retardation of the growth and yet difficulties in achieving demanded high doping levels. In the studies presented here, we have experimentally and theoretically investigated the growth and doping kinetics in Si gas-source MBE using SiH@sub 4@ and PH@sub 3@. Experimentally, the growth rate (R@sub g@) and, more importantly, the hydrogen (H) and phosphorous (P) coverages on the growing surface were obtained by temperature-programmed desorption. The R@sub g@ Arrhenius plot showed a seemingly conventional separation into a high- and a low-temperature (LT) region with a low and a high activation energy, respectively, but obtained P and H coverages indicate that the domain I (550