IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Wednesday Sessions
       Session EL-WeA

Paper EL-WeA6
Detailed Modeling of Si Gas-source MBE: Descriptions on Growth Rate and Hydrogen Coverage

Wednesday, October 31, 2001, 3:40 pm, Room 124

Session: Semiconductor Growth
Presenter: T. Murata, Tohoku University, Japan
Authors: T. Murata, Tohoku University, Japan
M. Suemitsu, Tohoku University, Japan
Correspondent: Click to Email
In response to recent requirements from CMOS technologies, Si CVD is attracting renewed attentions. The attentions include needs for more complete understanding of the growth kinetics and a precise modeling of the growth. We here present the results of our growth experiments and a growth model based on the results. What is unique in our experiments is the observation of the surface hydrogen coverage @theta@ during growth, which is doubtlessly a key parameter in the description of the growth in CVD mode and yet has been quite rarely obtained in the past. To obtain @theta@ we employed Si gas-source molecular beam epitaxy using disilane, and have conducted temperature-programmed-desorption measurements on the surface quenched from the growth. Growth rate and @theta@ were obtained as a function of both the growth temperature and the source-gas pressure. We then tested two growth models based on the results. While the conventional 2-site-adsorption model well described the temperature- and the pressure-dependence of the growth rate, it failed to reproduce the behavior of @theta@. In contrast, the 2-site/4-site adsorption model developed previously by the authors@footnote 1@ showed almost complete fits to both the growth rate and the hydrogen coverage. The model assumes the 2-site and 4-site adsorptions to dominate the growth at low and high temperatures, respectively, and the present results prove its excellent ability to describe the Si growth in CVD mode. This work was supported in part by a Grant-in-aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology, Japan. @FootnoteText@ @footnote 1@ Suemitsu et al., Jpn. J. Appl. Phys. 36(1997) L625. .