| AVS 47th International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-MoA1 Gate Engineering for sub 50 nm CMOS Devices J. Foucher, CNRS/LTM, France, G. Cunge, CEA/LETI, France, D. Fuard, R.L. Inglebert, L. Vallier, O. Joubert, CNRS/LTM, France |
| 2:20pm | PS2-MoA2 Fabrication of 80 nm PN-poly/metal Gate on Ultra-thin 1.5 nm Oxynitride K. Kinoshita, S. Saito, Y. Saito, M. Narihiro, M. Ueki, H. Wakabayashi, Y. Ochiai, T. Mogami, Y. Hayashi, NEC Corporation, Japan |
| 2:40pm | PS2-MoA3 Etch Rate Enhancement and Surface Roughening during W/Poly Si Stack Gate Etching Process H. Morioka, M. Nakaishi, T. Ishida, Fujitsu Limited, Japan |
| 3:00pm | PS2-MoA4 A Drift of Selectivity Depending on Chamber Seasonings in a Poly-Si/Oxide Etching Process using Inductively Coupled Plasma K. Miwa, Fujitsu VLSI Ltd., Japan, T. Mukai, M. Nakaishi, Fujitsu Ltd., Japan |
| 3:20pm | PS2-MoA5 Novel Dry Etch Chemistries for Metals A. Orland, R. Blumenthal, Auburn University |
| 3:40pm | PS2-MoA6 Experimental and Modeling Results for Process Scaling from 200 mm to 300 mm Wafers S.C. Siu, D. Cooperberg, V. Vahedi, R. Patrick, Lam Research Corporation |
| 4:00pm | PS2-MoA7 Improving Al Etch Processing in a High Density Plasma Reactor with a Faraday Shield D.A. Outka, S.C. Siu, N. Williams, Lam Research Corp. |
| 4:20pm | PS2-MoA8 Transfer Etch Profile Control for 248 nm Bilayer Thin Film Imaging S. Halle, R. Wise, J. Brown, IBM Microelectronics, O. Genz, Infineon Technologies Corporation, A. Thomas, T. Dyer, IBM Microelectronics, A.P. Mahorowala, M. Angelopoulos, IBM T.J. Watson Research Center, S. Johnston, Lam Research Corporation |
| 4:40pm | PS2-MoA9 Invited Paper Conductor Stack Etching: Technology and Productivity R.A. Gottscho, Lam Research Corporation |