| AVS 47th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-TuM1 Optimization of Plasma Processing for Manufacturing Using Fast Integrated Models B.Y. Yu, T.P. Phung, S.S. Shankar, Intel Corporation |
| 8:40am | PS-TuM2 Modeling Transport and Etch Chemistry in High Density Plasmas M.W. Kiehlbauch, D.B. Graves, University of California, Berkeley |
| 9:00am | PS-TuM3 Invited Paper Plasma Chemistry Model for Fluorocarbon Etching of SiO@sub 2@ P. Ho, J.E. Johannes, R.J. Buss, Sandia National Laboratories, E. Meeks, Reaction Design |
| 9:40am | PS-TuM5 Invited Paper Sustaining Another Decade of Innovation in Plasma Equipment and Process Design: Needs and Challenges@footnote 1@ M.J. Kushner, University of Illinois at Urbana-Champaign |
| 10:20am | PS-TuM7 Electron Transport and Power Deposition in Magnetically Enhanced Inductively Coupled Plasmas@footnote 1@ R.L. Kinder, M.J. Kushner, University of Illinois at Urbana-Champaign |
| 10:40am | PS-TuM8 Surface Reaction Model for Etch-rate Calculations in SiO@sub 2@ Selective Etching S. Kobayashi, T. Tatsumi, M. Matsui, K.K. Kawashima, M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 11:00am | PS-TuM9 3D Monte-Carlo Simulation of SiO@sub 2@ Film Growth Combined with Gas-phase Kinetic Model of TEOS-O@sub 2@ Plasma A. Rhallabi, P. Retho, A. Granier, A. Goullet, G. Turban, IMN University of Nantes, France |
| 11:20am | PS-TuM10 Integrated Ionized and Conventional PVD Process Analysis Comparisons P. Ventzek, V. Arunachalam, S. Rauf, Motorola Inc. |
| 11:40am | PS-TuM11 Modeling and Experimental Verification of a Ti/Nitrogen/Ar Ionized Physical Vapor Deposition Tool K. Tao, D. Mao, J.A. Hopwood, Northeastern University |