AVS 47th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuM

Invited Paper PS-TuM3
Plasma Chemistry Model for Fluorocarbon Etching of SiO@sub 2@

Tuesday, October 3, 2000, 9:00 am, Room 311

Session: Modeling of Plasma Processes
Presenter: P. Ho, Sandia National Laboratories
Authors: P. Ho, Sandia National Laboratories
J.E. Johannes, Sandia National Laboratories
R.J. Buss, Sandia National Laboratories
E. Meeks, Reaction Design
Correspondent: Click to Email
Plasmas of C@sub 2@F@sub 6@, CHF@sub 3@ and other fluorocarbons are used to etch silicon dioxide layers in the fabrication of microelectronic devices. Computational modeling of these systems can accelerate the design and optimization of these commercially important processes and equipment. We have developed a detailed model of the gas-phase and surface chemistry occurring in the C@sub 2@F@sub 6@ plasma - SiO@sub 2@ system. Reaction rates were obtained from independent published cross section and chemical kinetic data, whenever possible, or are estimates based on data for related molecules. A wide variety of experimental data from several experimental reactors were used to develop and validate the chemical mechanism. We have attained good overall agreement with the set of blanket etch rates, electron densities, negative ion densities, neutral species densities (i.e. CF, CF@sub 2@ and SiF) and ion current density data available to us. The work described here is part of a larger project on plasma etching funded by SEMATECH, and the work at Sandia National Laboratories was done under CRADA No. 1082. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000.