AVS 47th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuM

Paper PS-TuM9
3D Monte-Carlo Simulation of SiO@sub 2@ Film Growth Combined with Gas-phase Kinetic Model of TEOS-O@sub 2@ Plasma

Tuesday, October 3, 2000, 11:00 am, Room 311

Session: Modeling of Plasma Processes
Presenter: A. Rhallabi, IMN University of Nantes, France
Authors: A. Rhallabi, IMN University of Nantes, France
P. Retho, IMN University of Nantes, France
A. Granier, IMN University of Nantes, France
A. Goullet, IMN University of Nantes, France
G. Turban, IMN University of Nantes, France
Correspondent: Click to Email
A gas phase kinetic model of TEOS-O@sub 2@ plasma mixture combined with 3D Monte-Carlo surface model is developed to predict the microscopic properties of SiO@sub 2@ film as a function of the plasma parameters. The gas phase kinetic model is based on the mass balance equations of reactive species diffusing toward the surface. The mass balance equations in the diffusion chamber of our helicon reactor only take into account the electron impact dissociation and ionization rates of both TEOS and oxygen. Indeed, the low pressure (1 - 10 mTorr) and high density plasma allow to neglect the gas phase molecular reaction rates because the mean free path of the reactive species is large. In these conditions, the formation of the TEOS fragments (SiR@sub n@(OH)@sub 4-n@ where n=1-3 and R is OC@sub 2@ H@sub 5@) containing at least one OH group is mainly due to the dissociation of the R group into OH group by electron impact. On the other hand, a 3D kinetic Monte-Carlo model is developed to study the SiO@sub 2@ film growth. The fluxes of the reactive species are determined from the gas phase kinetic model. The SiO@sub 2@ growth process is mainly ensured by reaction between silicon sites and reactive precursors SiR@sub n@ (OH) @sub 4-n@ leading to the formation of oxygen bridges and the elimination of water. The nucleation phase mechanism was introduced in the surface model and showed the role of the substrate surface energy on the SiO@sub 2@ film adherence. The effects of some plasma parameters such as the RF power and the oxygen percentage on the deposition rate and the microscopic structure of the film are analyzed.