AVS 47th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuM

Paper PS-TuM10
Integrated Ionized and Conventional PVD Process Analysis Comparisons

Tuesday, October 3, 2000, 11:20 am, Room 311

Session: Modeling of Plasma Processes
Presenter: P. Ventzek, Motorola Inc.
Authors: P. Ventzek, Motorola Inc.
V. Arunachalam, Motorola Inc.
S. Rauf, Motorola Inc.
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Conventional physical vapor deposition (PVD) processes or variations on them are still prevalent as tools for thin film deposition and are often the process of choice when damage or cost of ownership issues are considered. Integrated equipment feature scale models are required to facilitate making the decision whether conventional processes or their variants can do the job of the more sophisticated IPVD tools. Integrated models (equipment to feature) exist for conventional PVD processes but it is rare that the plasma physics aspects of the models are folded into the analysis. Reasons for this include that the coupling the magnetron physics into the model is not easy and that reactive sputtering processes which are more often than not conventional PVD processes are themselves complex. First, we will describe the coupling of a phenomenological magnetron model with the Hybrid Plasma Equipment Model (University of Illinois). Then, this paper will compare the performance (equipment to feature) of generic IPVD and PVD tools. Performance is quantified in terms of ion and neutral angular and energy distribution functions, fluxes of species to the wafer/feature and resultant feature profile.