AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions

Session NS+NANO6-WeA
Nanoscale Modification of Materials

Wednesday, October 4, 2000, 2:00 pm, Room 302
Moderator: R.E. Palmer, The University of Birmingham, U.K.


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm NS+NANO6-WeA1
Selective-Area Chemical Vapor Deposition Using AFM-Patterned Silicon Nitride Growth Mask
S. Gwo, S.-W. Lin, Y.-C. Chou, T.T. Chen, National Tsing-Hua University, Taiwan, T. Yasuda, S. Yamasaki, Joint Research Center for Atom Technology (JRCAT), Japan, T.-S. Chao, National Nano Device Laboratory, Taiwan
2:20pm NS+NANO6-WeA2
Fabrication of Nanoscale Templates by Chemical Lithography
A. Gölzhäuser, W. Geyer, V. Stadler, W. Eck, M. Grunze, Universität Heidelberg, Germany, T. Weimann, P. Hinze, Physikalisch Technische Bundesanstalt, Germany, K. Edinger, University of Maryland
2:40pm NS+NANO6-WeA3 Invited Paper
National Nanotechnology Initiative: Overview
M. Roco, The National Science Foundation
3:20pm NS+NANO6-WeA5
Electronic Conductivity and Thermoelectric Measurements of Bismuth Nanoline Structures
K. Miki, A. Yamamoto, K. Sakamoto, Electrotechnical Laboratory, Japan
3:40pm NS+NANO6-WeA6
Quantum-wire Arrays Fabricated by a High-pressure High-temperature Injection Process
T.E. Huber, Howard University, M.J. Graf, Boston College, C.A. Foss Jr., Georgetown University
4:00pm NS+NANO6-WeA7
Transport Study of Single Bismuth Nanowire Fabricated by Silver and Silicon Nanowire Shadowmask
S. Choi, M. Leung, G. Stupian, N. Presser, The Aerospace Corporation, S. Chung, J. Heath, A. Khitun, University of California, Los Angeles, A. Balandin, University of California, Riverside
4:20pm NS+NANO6-WeA8
Conductance Anisotropy in a Mesoscopic Array of Atomic Wires: Ga/Si(112)@footnote 1@
K.J. Yoo, S. Tang, University of Tennessee, P.T. Sprunger, Louisiana State University, H.H. Weitering, University of Tennessee
4:40pm NS+NANO6-WeA9
Time Evolution of Ag Nanowires Grown on Ag/GaAs(110) Surfaces
H.-B. Yu, C.-S. Jiang, X.-D. Wang, C.-K. Shih, University of Texas at Austin
5:00pm NS+NANO6-WeA10
Ion Implanted Contacts to Nanostructures and Metallic Monolayers on Clean Surfaces
J.W. Nolan, B.N. Cotier, M.J. Butcher, P.H. Beton, P. Moriarty, M.R.C. Hunt, A. Neumann, University of Nottingham, UK, V.R. Dhanak, Daresbury Laboratory, UK, A. Gundlach, Edinburgh University, UK, S. Thoms, University of Glasgow, UK