AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions
       Session NS+NANO6-WeA

Paper NS+NANO6-WeA7
Transport Study of Single Bismuth Nanowire Fabricated by Silver and Silicon Nanowire Shadowmask

Wednesday, October 4, 2000, 4:00 pm, Room 302

Session: Nanoscale Modification of Materials
Presenter: S. Choi, The Aerospace Corporation
Authors: S. Choi, The Aerospace Corporation
M. Leung, The Aerospace Corporation
G. Stupian, The Aerospace Corporation
N. Presser, The Aerospace Corporation
S. Chung, University of California, Los Angeles
J. Heath, University of California, Los Angeles
A. Khitun, University of California, Los Angeles
A. Balandin, University of California, Riverside
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We have carried out measurements of the electrical conductivity of a single bismuth nanowire fabricated by low energy electron beam lithography using silver/silicon nanowire shadowmasks. The nanowires examined have characteristic dimensions slightly below the critical diameter (about 50nm) at which a semimetal to semiconductor phase transition was predicted to occur. Our results reveal a semiconductor-like temperature dependence of the electrical conductivity of a bismuth nanowire which is strikingly different from the bulk dependence. We have also developed a theoretical model which adequately describes the dependence of the electrical conductivity and energy band gap on the diameter of bismuth nanowires and other parameters. The experimental data presented may be crucial for suggested thermoelectric application of bismuth nanowires.