AVS 47th International Symposium
    Processing at the Nanoscale/NANO 6 Wednesday Sessions
       Session NS+NANO6-WeA

Paper NS+NANO6-WeA1
Selective-Area Chemical Vapor Deposition Using AFM-Patterned Silicon Nitride Growth Mask

Wednesday, October 4, 2000, 2:00 pm, Room 302

Session: Nanoscale Modification of Materials
Presenter: S. Gwo, National Tsing-Hua University, Taiwan
Authors: S. Gwo, National Tsing-Hua University, Taiwan
S.-W. Lin, National Tsing-Hua University, Taiwan
Y.-C. Chou, National Tsing-Hua University, Taiwan
T.T. Chen, National Tsing-Hua University, Taiwan
T. Yasuda, Joint Research Center for Atom Technology (JRCAT), Japan
S. Yamasaki, Joint Research Center for Atom Technology (JRCAT), Japan
T.-S. Chao, National Nano Device Laboratory, Taiwan
Correspondent: Click to Email
Silicon nitride (Si@sub 3@N@sub 4@) is a very robust material against oxidation and etching and is typically used as an oxidation mask. Here we report atomic force microscope (AFM)-based local oxidation of Si@sub 3@N@sub 4@ and its applications in nanofabrication. Owing to very large etch and growth selectivities among Si@sub 3@N@sub 4@, SiO@sub 2@, and Si, AFM nanolithography using Si@sub 3@N@sub 4@-mask could be used to both "subtractive" (selective-area anisotropic etching of underlying substrate) and "additive" (selective-area chemical vapor deposition) fabrication processes of nanostructures through the openings on the Si@sub 3@N@sub 4@ resist mask. Using this AFM-patterning method combined with a novel design of bilayer growth mask, which is entirely compatible with the existing microelectronic processes, synthesis of ultrahigh packing density and ordered nanostructure becomes readily achievable.