| AVS 46th International Symposium | |
| Electronic Materials and Processing Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM1-ThM1 Strength of Nanoscale Copper Under Shear P. Heino, Tampere University of Technology, Finland, P.H. Holloway, University of Florida, E. Ristolainen, Tampere University of Technology, Finland |
| 8:40am | EM1-ThM2 Invited Paper A Discussion of the Interconnection Science and Technologies S.P. Murarka, Rennselaer Polytechnic Institute |
| 9:20am | EM1-ThM4 Electrochemical Deposition Cu Films for ULSI Applications J.C. Hu, National Tsing Hua University, Taiwan, R.O.C., T.C. Chang, National Nano Device Laboratory, Taiwan, R.O.C., W.C. Gau, C.L. Cheng, Chung-Yuan University, Taiwan, R.O.C., M.S. Feng, National Chiao-Tong University, Taiwan, R.O.C., Allen Yang, Kevin Lee, Merck-Kanto Advanced Chemical Ltd., Taiwan, R.O.C., L.-J. Chen, National Tsing Hua University, Taiwan, R.O.C. |
| 9:40am | EM1-ThM5 Complete Filling of High-Purity Copper in Subquarter-Micron Trench Structure Using Plasma CVD Reactor with H Atom Source H.J. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe, Kyushu University, Japan |
| 10:00am | EM1-ThM6 The Stability of Thin TiN and TaN Layers as Diffusion Barriers for Copper under Thermal Annealing and Bias Temperature Stress Conditions H. Kizil, G. Kim, C. Steinbrüchel, Rensselaer Polytechnic Institute, B. Zhao, L. Tsau, M. Brongo, Conexant Systems |
| 10:20am | EM1-ThM7 Surface Modification and Cleaning Enhancement of TaSiN Films with Dilute Hydrofluoric Acid* P.J.S. Mangat, W.J. Dauksher, K.D. Cummings, Motorola, Inc., W.L. O'Brien, Mad City Labs, Inc. |
| 10:40am | EM1-ThM8 Invited Paper Fluroinated Amorphous Carbon - A Low Dielectric Constant Material for Multilevel Interconnect Applications W. Zhu, C.S. Pai, H.E. Bair, H.W. Krautter, B.S. Dennis, Lucent Technologies |
| 11:20am | EM1-ThM10 Multilayered Si-Based Organic Thin Films with Low-Dielectric-Constant Formed by Plasma-Enhanced Chemical Vapor Deposition from Hexamethyldisiloxane M. Okumura, S. Ichiyanagi, T. Fujii, M. Hiramatsu, M. Nawata, Meijo University, Japan |
| 11:40am | EM1-ThM11 Low-k Si-O-C-H Composite Films Prepared by Plasma Enhanced Chemical Vapor Deposition using BTMSM(bis-trimethylsilylmethane) Precursor Y.-H. Kim, H.J. Kim, Seoul National University, Korea |