AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM1-ThM

Invited Paper EM1-ThM2
A Discussion of the Interconnection Science and Technologies

Thursday, October 28, 1999, 8:40 am, Room 608

Session: Cu, Low-k Dielectrics and Interfaces
Presenter: S.P. Murarka, Rennselaer Polytechnic Institute
Correspondent: Click to Email

Shrinking device dimensions have affected the interconnect performance leading to replacement of Al with Cu and investigations of a variety of low-K materials to replace SiO@sub 2@ and of other modes (e.g. optical) of signal transmissions between devices and devices and the outside world. As the surface-to-volume ratio increases, the surfaces and interfaces will control the properties and reliability of the interconnection and dielectric materials. In this paper, we will review and discuss the science and technology of interconnections for semiconductor circuits and the impact of surfaces and interfaces on their performance.