AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM1-ThM

Paper EM1-ThM10
Multilayered Si-Based Organic Thin Films with Low-Dielectric-Constant Formed by Plasma-Enhanced Chemical Vapor Deposition from Hexamethyldisiloxane

Thursday, October 28, 1999, 11:20 am, Room 608

Session: Cu, Low-k Dielectrics and Interfaces
Presenter: M. Okumura, Meijo University, Japan
Authors: M. Okumura, Meijo University, Japan
S. Ichiyanagi, Meijo University, Japan
T. Fujii, Meijo University, Japan
M. Hiramatsu, Meijo University, Japan
M. Nawata, Meijo University, Japan
Correspondent: Click to Email
As the device geometries of ultralarge scale integration (ULSI) circuits continue to shrink, low-dielectric-constant interlayer dielectric films are required in order to realize ULSI devices of high performance. We have previously reported a remote plasma-enhanced chemical vapor deposition (PECVD) from hexamethyldisiloxane (HMDSO) and O@sub 2@ using a radio-frequency (rf, 13.56MHz) inductively coupled plasma (ICP) source for the formation of Si-based organic thin films as a new insulator with a dielectric constant lower than 3.0. In this work, to improve the thermal stability and dielectric property of Si-based organic thin films fabricated by PECVD with HMDSO, multilayered structure of methyl-siloxane layer and thin silicon-oxide layer has been proposed. After the deposition of the first Si-based organic film using PECVD from HMDSO and O@sub 2@ at room temperature, the film was rapidly annealed by the irradiation of CO@sub 2@ laser beam with exposed to O@sub 2@ plasma without HMDSO in order to transform the surface of the organic film into silicon oxide for the improvement of thermal stability. The second Si-based organic layer was deposited on the transformed layer, and the surface of the top layer was transformed into silicon oxide in the same manner. This procedure was repeated at most 20 times. Chemical compositions and structures of the multilayered films were analyzed by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The dielectric constant of the multilayered Si-based organic thin films varied from 2.6 to 4.5. The effects of deposition conditions on the film properties were investigated.